5秒后页面跳转
JANTXVG2N7431 PDF预览

JANTXVG2N7431

更新时间: 2023-12-06 20:12:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1335K
描述
Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 500 krad(Si) TID, QPL

JANTXVG2N7431 数据手册

 浏览型号JANTXVG2N7431的Datasheet PDF文件第2页浏览型号JANTXVG2N7431的Datasheet PDF文件第3页浏览型号JANTXVG2N7431的Datasheet PDF文件第4页浏览型号JANTXVG2N7431的Datasheet PDF文件第5页浏览型号JANTXVG2N7431的Datasheet PDF文件第6页浏览型号JANTXVG2N7431的Datasheet PDF文件第7页 
IRHM7064 (JANSR2N7431)  
PD-91564J  
Radiation Hardened Power MOSFET  
Thru-Hole (TO-254AA)  
60V, N-channel, Rad Hard HEXFETTechnology  
Product Summary  
Features  
Single event effect (SEE) hardened  
Part number: IRHM7064 (JANSR2N7431),  
IRHM3064 (JANSF2N7431),  
IRHM5064 (JANSG2N7431)  
REF: MIL-PRF-19500/663  
Radiation level: 100 krad (Si),  
300 krad (Si), 500 krad (Si)  
RDS(on),max : 21 m  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
ID : 35A*  
Ceramic package  
ESD rating: Class 3B per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
TO254AA  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and reliability in satellite applications. These devices have  
been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHM7064  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
TO-254AA  
100krad(Si)  
100krad(Si)  
100krad(Si)  
300krad(Si)  
300krad(Si)  
500krad(Si)  
500krad(Si)  
IRHM7064SCS  
JANSR2N7431  
IRHM3064  
S-Level  
JANS  
COTS  
JANSF2N7431  
IRHM5064  
JANS  
COTS  
JANSG2N7431  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2021-06-24  
 
 
 
 
 

与JANTXVG2N7431相关器件

型号 品牌 获取价格 描述 数据表
JANTXVG2N7431U INFINEON

获取价格

Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 500 krad(Si)
JANTXVH2N7261 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF
JANTXVH2N7262 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5.5A I(D) | TO-205AF
JANTXVH2N7268 INFINEON

获取价格

Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
JANTXVH2N7268U INFINEON

获取价格

Power Field-Effect Transistor, 34A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
JANTXVH2N7269 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254AA
JANTXVH2N7269U MICROSEMI

获取价格

Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
JANTXVH2N7270 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-254AA
JANTXVH2N7294 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 69A I(D) | TO-254AA
JANTXVH2N7298 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9A I(D) | TO-254AA