生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-CDSO-N3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.17 | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-CDSO-N3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500/317 | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N3250A | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-18, | |
JANTXV2N3251A | ETC |
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18 | |
JANTXV2N3251AUB | MICROSEMI |
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Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC | |
JANTXV2N3418 | VISHAY |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P | |
JANTXV2N3418 | APITECH |
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Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5 | |
JANTXV2N3418 | MICROSEMI |
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Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI | |
JANTXV2N3418S | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | |
JANTXV2N3418U4 | MICROSEMI |
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Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC | |
JANTXV2N3419 | MICROSEMI |
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Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI | |
JANTXV2N3419 | VISHAY |
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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P |