Datasheet > JANTXV2N3442

JANTXV2N3442

更新时间： 2024-10-05 00:00:03

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描述
TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 10A I(C) \| TO-3

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JANTXV2N3442 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 05 November 1999.

INCH-POUND

MIL-PRF-19500/370D

05 August 1999

SUPERSEDING

MIL-S-19500/370C

25 September 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

TYPE 2N3442, JAN, JANTX AND JANTXV

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistor. Three levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (similar to TO-3), (see 3.3).

1.3 Maximum ratings.

and T

°C

CBO

CEO

EBO

CER

STG

= +25°C

V dc

160

V dc

140

V dc

150

A dc

6.0

117

-65 to +200

1/ Derate linearly 34.2 mW/°C above T = +25°C.

2/ Derate linearly 668 mW/°C above T = +25°C.

1.4 Primary electrical characteristics.

FE1

CE(sat)

= 4 V dc

= 3 A dc

= 4 V dc

I = 3 A dc

= 3 A dc

= 300 mA dc

f = 100 kHz

1.0

V dc

°C/W

1.5

Min

Max

1.0

1/ Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...13

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