Datasheet > JANTXV2N3485A

JANTXV2N3485A

更新时间： 2024-10-05 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
18页	120K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 600MA I(C) \| TO-46

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JANTXV2N3485A 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 July 2002.

INCH-POUND

MIL-PRF-19500/392F

5 April 2002

SUPERSEDING

MIL-PRF-19500/392E

6 June 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

TYPE 2N3485A, 2N3486A, JAN, JANTX AND JANTXV

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Three

levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (T0-46).

1.3 Maximum ratings.

P_T

V_CBO

V_CEO

V_EBO

I_C

T_opand T_ST

R_qJC

R_qJA

T_A=+25°C T_C= +25°C

(1)

(2)

0.5

2.0

V dc

mA dc

600

°C

-65 TO

+200

°C /W

°C /mW

0.325

(1) Derate linearly at 3.08 mW/°C above T_A= +37.5°C.

(2) Derate linearly at 11.43 mW/°C above T_C= +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...18

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