Datasheet > JANTXV2N3585

JANTXV2N3585

更新时间： 2024-11-30 23:01:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管局域网高功率电源
页数	文件大小	规格书
2页	59K
描述
NPN HIGH POWER SILICON TRANSISTOR

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中文翻译

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数据手册

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JANTXV2N3585 数据手册

TECHNICAL DATA

NPN HIGH POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 384

Devices

Qualified Level

JAN

2N3584

2N3585

JANTX

JANTXV

MAXIMUM RATINGS

Symbol

2N3585

Ratings

2N3584

250

Units

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

300

500

400

V_CEO

V_CBO

V_CER

V_EBO

I_B

375

300

6.0

1.0

2.0

Collector Current

I_C

Total Power Dissipation

@ T_A= +25⁰C ⁽¹⁾

@ T_C= +25⁰C ⁽²⁾

2.5

⁰C

P_T

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

⁰C/W

TO-66* (TO-213AA)

Thermal Resistance, Junction-to-Case

5.0

qJC

1) Derate linearly @ 14.85 mW/⁰C for T_A> +25⁰C

2) Derate linearly @ 200 mW/⁰C for T_C> +25⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Symbol

Min.

Max.

Unit

Vdc

250

300

2N3584

2N3585

V_(BR)

CEO

Collector-Base Breakdown Voltage

I_C= 15 mAdc

375

500

2N3584

2N3585

V_(BR)

CER

Collector-Emitter Cutoff Current

V_CE= 150 Vdc

5.0

mAdc

I_CEO

I_CEX

Collector-Emitter Cutoff Current

V_CE= 300 Vdc, V_BE= 1.5 Vdc

V_CE= 400 Vdc, V_BE= 1.5 Vdc

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

1.0

2N3584

2N3585

0.5

mAdc

I_EBO

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3584, 2N3585 JAN SERIES

中文翻译

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