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JANTXV2N3634 PDF预览

JANTXV2N3634

更新时间: 2024-11-29 23:01:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体放大器晶体管开关
页数 文件大小 规格书
2页 61K
描述
PNP SILICON AMPLIFIER TRANSISTOR

JANTXV2N3634 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.19
最大集电极电流 (IC):1 A集电极-发射极最大电压:140 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Qualified参考标准:MIL-19500/357H
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHz最大关闭时间(toff):650 ns
最大开启时间(吨):200 nsBase Number Matches:1

JANTXV2N3634 数据手册

 浏览型号JANTXV2N3634的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP SILICON AMPLIFIER TRANSISTOR  
Qualified per MIL-PRF-19500/ 357  
Devices  
Qualified Level  
JAN  
2N3634  
2N3635  
2N3636  
2N3637  
JANTX  
2N3634L  
2N3635L  
2N3636L  
2N3637L  
JANTXV  
JANS  
MAXIMUM RATINGS  
Ratings  
2N3634* 2N3636*  
2N3635* 2N3637*  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
140  
175  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
TO-39* (TO-205AD)  
2N3634, 2N3635  
2N3636, 2N3637  
140  
175  
5.0  
1.0  
Total Power Dissipation  
@ TA = +250C(1)  
@ TC = +250C(2)  
1.0  
5.0  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices  
1) Derate linearly 5.71 mW/0C for TA > +250C  
TO-5*  
2N3634, 2N3635  
2N3636, 2N3637  
2) Derate linearly 28.6 mW/0C for TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
140  
175  
Vdc  
2N3634, 2N3635  
2N3636, 2N3637  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 100 Vdc  
VCB = 140 Vdc  
hAdc  
mAdc  
ICBO  
100  
10  
2N3634, 2N3635  
Emitter-Base Cutoff Current  
VEB = 3.0 Vdc  
VEB = 5.0 Vdc  
hAdc  
mAdc  
IEBO  
50  
10  
Collector-Emitter Cutoff Current  
VCE = 100 Vdc  
10  
ICEO  
mAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTXV2N3634 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N3634 MICROSEMI

完全替代

PNP SILICON AMPLIFIER TRANSISTOR
2N3634L MICROSEMI

类似代替

PNP SILICON AMPLIFIER TRANSISTOR
JANSR2N3634 MICROSEMI

功能相似

Small Signal Bipolar Transistor, 1A I(C), PNP, TO-39, TO-39, 3 PIN

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