Datasheet > JANTXV2N3251A

JANTXV2N3251A

更新时间： 2024-10-05 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
20页	108K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 200MA I(C) \| TO-18

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JANTXV2N3251A 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 28 April 2002.

INCH-POUND

MIL-PRF-19500/323H

28 January 2002

SUPERSEDING

MIL-PRF-19500/323G

22 June 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

TYPES 2N3250A, 2N3251A, 2N3250AUB, 2N3251AUB,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for die.

1.2 Physical dimensions. See figures 1 (similar to TO-18), 2 (surface mount), and 3 (die) herein.

1.3 Maximum ratings.

(1)

and T

STG

θJA

(1)

CBO

CEO

EBO

= +25°C

V dc

5.0

mA dc

200

°C

°C/W

0.36

-65 to +200

417

(1) Derate linearly 2.4 mW/°C above T_A= +25°C.

1.4 Primary electrical characteristics.

h_FE4(1)

FE1

FE3

(1)

|h |

Limits

= 1.0 V dc

f = 100 MHz

= 1.0 V dc

= 50 mA dc

= 20 V dc; I_C= 10 mA dc

= 0.1 mA dc

I = 10 mA dc

Min

Max

Min Max

2N3250A, AUB

2N3251A, AUB

50 150

100 300

2.5

3.0

9.0

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...20

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与JANTXV2N3251A相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N3251AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC
JANTXV2N3418	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JANTXV2N3418	APITECH	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
JANTXV2N3418	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTXV2N3418S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 3A I(C)
JANTXV2N3418U4	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC
JANTXV2N3419	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SMI
JANTXV2N3419	VISHAY	获取价格	Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 P
JANTXV2N3419	APITECH	获取价格	Small Signal Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
JANTXV2N3419S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 3A I(C) \| TO-39

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