5秒后页面跳转
JANTXV2N3440UA PDF预览

JANTXV2N3440UA

更新时间: 2024-10-05 00:00:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
21页 138K
描述
BJT

JANTXV2N3440UA 数据手册

 浏览型号JANTXV2N3440UA的Datasheet PDF文件第2页浏览型号JANTXV2N3440UA的Datasheet PDF文件第3页浏览型号JANTXV2N3440UA的Datasheet PDF文件第4页浏览型号JANTXV2N3440UA的Datasheet PDF文件第5页浏览型号JANTXV2N3440UA的Datasheet PDF文件第6页浏览型号JANTXV2N3440UA的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 8 October 2002.  
MIL-PRF-19500/368F  
8 July 2002  
SUPERSEDING  
MIL-PRF-19500/368E  
24 August 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER  
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage  
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in  
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.  
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),  
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).  
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.  
Types  
P
P
V
V
V
I
T
and T  
OP  
(1)  
(2)  
R
θJA  
T
T
CBO  
EBO  
CEO  
C
STG  
T
= +25°C  
T
= +25°C  
C
A
W
W
V dc  
450  
V dc  
7
V dc  
350  
A dc  
1.0  
°C  
°C/W  
2N3439, 2N3439L,  
2N3439UA  
0.8  
5.0  
-65 to +200  
-65 to +200  
325  
2N3440, 2N3440L  
2N3440UA  
0.8  
5.0  
300  
7
250  
1.0  
325  
(1) Derate linearly 5.7 mW/°C for TA > +60°C.  
(2) Derate linearly 28.6 mW/°C for TC > +25°C.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,  
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal  
(DD Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

与JANTXV2N3440UA相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N3442 ETC

获取价格

TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 10A I(C) | TO-3
JANTXV2N3467 MICROSEMI

获取价格

PNP SILICON SWITCHING TRANSISTOR
JANTXV2N3467 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
JANTXV2N3467L MICROSEMI

获取价格

PNP SILICON SWITCHING TRANSISTOR
JANTXV2N3468 MICROSEMI

获取价格

PNP SILICON SWITCHING TRANSISTOR
JANTXV2N3468L MICROSEMI

获取价格

PNP SILICON SWITCHING TRANSISTOR
JANTXV2N3485A ETC

获取价格

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-46
JANTXV2N3486A ETC

获取价格

TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-46
JANTXV2N3498 MICROSEMI

获取价格

NPN SILICON TRANSISTOR
JANTXV2N3498L MICROSEMI

获取价格

NPN SILICON TRANSISTOR