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JANTXV1N5189 PDF预览

JANTXV1N5189

更新时间： 2024-11-30 21:17:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复二极管局域网
页数 文件大小 规格书
2页 79K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, E, 2 PIN

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JANTXV1N5189 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, GLASS, E, 2 PIN针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.49
其他特性：HIGH RELIABILITY应用：FAST RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.5 VJESD-30 代码：O-LALF-W2
JESD-609代码：e0最大非重复峰值正向电流：80 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified参考标准：MIL-19500/424
最大反向电流：2 µA最大反向恢复时间：0.3 µs
表面贴装：NO技术：AVALANCHE
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

JANTXV1N5189 数据手册

 浏览型号JANTXV1N5189的Datasheet PDF文件第2页 
1N5186 thru 1N5190  
VOIDLESS-HERMETICALLY SEALED  
FAST RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 3.0 Amp rated rectifiers for working peak reverse  
voltages from 100 to 600 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in surface mount MELF package configurations by adding a “US”  
suffix. Microsemi also offers numerous other rectifier products to meet higher and  
lower current ratings with various recovery time speed requirements including fast  
and ultrafast device types in both through-hole and surface mount packages.  
Package E  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N5186 to 1N5190 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Fast recovery 3 Amp rectifiers 100 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges,  
half-bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 100 to 600 Volts.  
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/424  
Low thermal resistance  
•
Controlled avalanche with peak reverse power  
capability  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Thermal Resistance: 20oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
TERMINATIONS: Axial-leads are Tin/Lead  
(Sn/Pb) over Copper  
•
•
•
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
Average Rectified Forward Current (IO): 3.0 Amps @ TA  
= 25ºC and 0.700 Amps at TA = 150ºC  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 750 mg  
•
•
Forward Surge Current: 80 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING PEAK  
REVERSE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
FORWARD  
VOLTAGE  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
REVERSE  
RECOVERY  
TIME  
AVERAGE  
RECTIFIED  
CURRENT AMPS  
VOLTAGE  
V
F
V
V
@ 50μA  
I
@ V  
t
I
@ 9A (pulsed)  
TYPE  
RWM  
BR  
R
25oC  
µA  
RWM  
rr  
O
MIN  
MAX  
100oC  
25oC  
AMPS  
3.0  
3.0  
3.0  
150oC  
AMPS  
0.7  
0.7  
0.7  
VOLTS  
100V  
200V  
400V  
500V  
600V  
VOLTS  
VOLTS  
VOLTS  
ns  
150  
200  
250  
300  
400  
µA  
1N5186  
1N5187  
1N5188  
1N5189  
1N5190  
120V  
240V  
480V  
550V  
660V  
0.9V  
1.5V  
2.0  
100  
3.0  
3.0  
0.7  
0.7  
Copyright © 2005  
3-16-2005 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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