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JANTXV1N5195US

更新时间： 2024-12-01 05:37:23
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
15页 266K
描述
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM),

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JANTXV1N5195US 数据手册

 浏览型号JANTXV1N5195US的Datasheet PDF文件第2页浏览型号JANTXV1N5195US的Datasheet PDF文件第3页浏览型号JANTXV1N5195US的Datasheet PDF文件第4页浏览型号JANTXV1N5195US的Datasheet PDF文件第5页浏览型号JANTXV1N5195US的Datasheet PDF文件第6页浏览型号JANTXV1N5195US的Datasheet PDF文件第7页 
INCH-POUND  
MIL-PRF-19500/118H  
19 July 2007  
SUPERSEDING  
MIL-PRF-19500/118G  
22 June 2006  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 19 October 2007.  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON,  
TYPES 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR,  
1N5195US,1N5196, 1N5196UR, AND 1N5196US, JAN, JANTX, AND JANTXV  
This specification is approved for use by all Departments and Agencies  
of the Department of Defense.  
The requirements for acquiring the product described herein shall consist  
of this specification sheet and MIL-PRF-19500.  
Types 1N483B, 1N485B, 1N486B are inactive for new design. See 6.4.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon diodes. Three levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1, figure 2 (DO-213AA), and figure 3.  
1.3 Maximum ratings. T = +25°C unless otherwise specified.  
A
V
V
I
I
I
T and  
R
R
R
RM RWM  
O
O
=
FSM  
J
ΘJL  
ΘJEC ΘJA(PCB)  
(1) (2)  
T =75°C  
T
A
t = 1/120 s T  
L =  
.375 inch  
(9.53 mm)  
LD = 0  
Type (1)  
p
T
STG  
A
150°C  
= 25°C  
A
V (pk) V (pk)  
mA  
mA  
A
2
°C  
°C/W  
250  
250  
°C/W  
°C/W  
1N483B  
1N5194  
1N5194UR  
1N5194US  
80  
70  
200  
50  
-65 to  
+175  
275  
100  
40  
1N485B  
1N5195  
200  
180  
250  
250  
1N5195UR  
1N5195US  
100  
40  
1N486B  
1N5196  
250  
225  
250  
250  
1N5196UR  
1N5196US  
100  
40  
(1) The electrical characteristics for UR and US suffix devices are identical to their corresponding leaded devices  
unless otherwise noted (applies only to the 1N5194, 1N5195, and 1N5196).  
(2) Derate 1.2 mA/°C between 25°C and 150°C. Derate 2 mA/°C between 150°C and 175°C (see figure 4).  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://assist.daps.dla.mil .  
AMSC N/A  
FSC 5961  
1234567...15

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JANTXV1N5196UR MICROSEMI

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JANTXV1N5196US MICROSEMI

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JANTXV1N5283 MOTOROLA

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JANTXV1N5283-1 CDI-DIODE

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JANTXV1N5283UR-1 MICROSEMI

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