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JANTX2N2432 PDF预览

JANTX2N2432

更新时间: 2024-11-29 20:22:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
2页 64K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

JANTX2N2432 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:compliantHTS代码:8541.21.00.95
风险等级:5.21Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Qualified
参考标准:MIL-19500/268C子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
最大关闭时间(toff):55 ns最大开启时间(吨):75 ns
Base Number Matches:1

JANTX2N2432 数据手册

 浏览型号JANTX2N2432的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SILICON LOW POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 313  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N2432  
2N2432A  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
Collector Current  
Symbol 2N2432 2N2432A  
Unit  
Vdc  
30  
30  
15  
45  
45  
18  
VCEO  
VCBO  
VECO  
IC  
Vdc  
Vdc  
100  
mAdc  
(1)  
Total Power Dissipation  
@ TA = +250C  
300  
600  
mW  
mW  
PT  
@ TC = +250C (2)  
-65 to +200  
-65 to +175  
0C  
T
stg  
Operating & Storage Junction Temp. Range  
0C  
TJ  
THERMAL CHARACTERISTICS  
Characteristics  
TO- 18*  
(TO-206AA)  
Symbol  
Max.  
Unit  
mW/ 0C  
Thermal Resistance, Junction-to-Case  
0.25  
R
qJC  
1) Derate linearly 2.0 mW/0C above TA > +250C  
2) Derate linearly 4.0 mW/0C above TC > +250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Emitter-Collector Breakdown Voltage  
15  
18  
10  
IE = 100 mAdc, IB = 0  
2N2432  
2N2432A  
Both  
Vdc  
V(BR)  
ECO  
IE = 10 mAdc, IB = 0  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
30  
45  
Vdc  
2N2432  
2N2432A  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCB = 25 Vdc  
VCB = 40 Vdc  
10  
10  
2N2432  
2N2432A  
ICES  
hAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTX2N2432 替代型号

型号 品牌 替代类型 描述 数据表
2N2432 MICROSEMI

完全替代

NPN SILICON LOW POWER TRANSISTOR
JAN2N2432 MICROSEMI

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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A

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