Datasheet > JANTX2N2432A

JANTX2N2432A

更新时间： 2024-11-29 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管斩波器
页数	文件大小	规格书
20页	122K
描述
TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 100MA I(C) \| TO-18

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JANTX2N2432A 数据手册

INCH-POUND

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 27 May 2002.

MIL-PRF-19500/313F

27 February 2002

SUPERSEDING

MIL-PRF-19500/313E

18 August 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER

TYPES 2N2432, 2N2432A, 2N2432UB, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for low power, high speed chopper, NPN

silicon transistors. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500. Two levels of product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (T0-18), figures 2 and 3 (JANHC/JANKC die), and figure 4 (UB package).

1.3 Maximum ratings.

Type

P_T

V_CBO

V_CEO

V_ECO

I_C

T_STG

T_J

R_θJA

T_A= +25°C

V dc

mA dc

°C

°C/mW

2N2432

2N2432A

2N2432UB

360 (1)

100

-65 to +200

-65 to +175

325

(1) Derate linearly 2.06 mW/°C for T_A> +25.5°C.

1.4 Primary electrical characteristics at T_A= +25°C.

h_FE1

h_FE2

h_FE(inv)1

V_CE(sat)

r_ec(on)

R_θJC

Limits

V_CE= 10 mA dc

I_e= 100 µA ac (rms)

V_CE= 5 V dc

I_C= 1 mA dc

I_C= 10 mA dc

I_E= 200 µA dc

I_B= 1 mA dc, I_E= 0, f = 1 kHz

I_C= 10 µA dc

I_B= 500 µA dc

2N2432

2N2432A

2N2432

2N2432A

2N2432UB

V dc

.15

Ohms

°C/mW

Min

400

Max

.25

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...20

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与JANTX2N2432A相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N2481	RAYTHEON	获取价格	Small Signal Bipolar Transistor,
JANTX2N2484	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-18,
JANTX2N2484UA	ETC	获取价格	BJT
JANTX2N2484UB	ETC	获取价格	BJT
JANTX2N2604	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206
JANTX2N2604A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JANTX2N2604UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JANTX2N2605	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JANTX2N2605UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JANTX2N2812	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 10A I(C) \| STR-1/4

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