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JANTX2N2484UA

更新时间: 2024-02-03 08:58:12
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
19页 101K
描述
BJT

JANTX2N2484UA 技术参数

是否Rohs认证:不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.03
Is Samacsys:N最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):200
最高工作温度:200 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.36 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

JANTX2N2484UA 数据手册

 浏览型号JANTX2N2484UA的Datasheet PDF文件第2页浏览型号JANTX2N2484UA的Datasheet PDF文件第3页浏览型号JANTX2N2484UA的Datasheet PDF文件第4页浏览型号JANTX2N2484UA的Datasheet PDF文件第5页浏览型号JANTX2N2484UA的Datasheet PDF文件第6页浏览型号JANTX2N2484UA的Datasheet PDF文件第7页 
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 15 May 2002.  
INCH-POUND  
MIL-PRF-19500/376F  
15 February 2002  
SUPERSEDING  
MIL-PRF-19500/376E  
31 August 2000  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER  
TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four  
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product  
assurance are provided for die.  
1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and  
UB), and figures 4 and 5 (die).  
1.3 Maximum ratings.  
Types  
PT (1)  
VCBO  
VEBO  
VCEO  
IC  
TJ and TSTG  
RθJA  
TA = +25°C  
mW  
V dc  
V dc  
V dc  
mA dc  
°C  
°C/W  
2N2484  
2N2484UA  
2N2484UB  
360  
360  
360  
60  
60  
60  
6
6
6
60  
60  
60  
50  
50  
50  
-65 to +200  
-65 to +200  
-65 to +200  
325  
325  
325  
(1) Derate linearly at 2.06 mW/°C above TA = +25°C.  
1.4 Primary electrical characteristics.  
hfe  
Cobo  
|hfe|2  
VCE(sat) (1)  
Limits  
VCE = 5 V dc  
IC = 1 mA dc  
f = 1 kHz  
IE = 0  
VCB = 5 V dc  
100 kHz f 1 MHz  
IC = 1.0 mA dc  
IB = 0.1 mA dc  
IC = 500 µA dc  
VCE = 5 V dc  
f = 30 MHz  
pF  
V dc  
0.3  
Min  
Max  
250  
900  
2.0  
7.0  
5.0  
(1) Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,  
P.O. Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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