Datasheet > JANTX2N2484UA

JANTX2N2484UA

更新时间： 2024-11-29 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
19页	101K
描述
BJT

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数据手册

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JANTX2N2484UA 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 15 May 2002.

INCH-POUND

MIL-PRF-19500/376F

15 February 2002

SUPERSEDING

MIL-PRF-19500/376E

31 August 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4 and 5 (die).

1.3 Maximum ratings.

Types

P_T(1)

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

R_θJA

T_A= +25°C

V dc

mA dc

°C

°C/W

2N2484

2N2484UA

2N2484UB

360

-65 to +200

325

(1) Derate linearly at 2.06 mW/°C above T_A= +25°C.

1.4 Primary electrical characteristics.

h_fe

C_obo

|h_fe|2

V_CE(sat)(1)

Limits

V_CE= 5 V dc

I_C= 1 mA dc

f = 1 kHz

I_E= 0

V_CB= 5 V dc

100 kHz ≤ f ≤ 1 MHz

I_C= 1.0 mA dc

I_B= 0.1 mA dc

I_C= 500 µA dc

V_CE= 5 V dc

f = 30 MHz

V dc

0.3

Min

Max

250

900

2.0

7.0

5.0

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000), by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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与JANTX2N2484UA相关器件

型号	品牌	获取价格	描述	数据表
JANTX2N2484UB	ETC	获取价格	BJT
JANTX2N2604	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206
JANTX2N2604A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,
JANTX2N2604UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JANTX2N2605	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JANTX2N2605UB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMI
JANTX2N2812	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 10A I(C) \| STR-1/4
JANTX2N2814	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| STR-1/4
JANTX2N2857	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 40MA I(C) \| TO-72
JANTX2N2857UB	MICROSEMI	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Sili

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