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JANTX2N2906AUBC

更新时间： 2024-11-29 12:59:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体小信号双极晶体管开关
页数	文件大小	规格书
2页	62K
描述
Transistor

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中文翻译

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技术参数
数据手册

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JANTX2N2906AUBC 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.06	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	40
最高工作温度：	200 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

JANTX2N2906AUBC 数据手册

TECHNICAL DATA

PNP SMALL SIGNAL SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 291

Devices

2N2906A

Qualified Level

JAN

2N2907A

2N2906AL

2N2906AUA

2N2906AUB

2N2907AL

2N2907AUA

2N2907AUB

JANTX

JANTXV

JANS

MAXIMUM RATINGS

Ratings

Symbol

V_CEO

All Types Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

V_CBO

TO-18* (TO-206AA)

5.0

600

V_EBO

mAdc

I_C

Total Power Dissipation

@ T_A= +25⁰C

@ T_C= +25⁰C

0.4

1.8

⁰C

(1)

P_T

(2 / 3)

4 PIN*

2N2906AUA, 2N2907AUA

P_T

T_J_,T

Operating & Storage Junction Temperature Range

-65 to +200

stg

1) Derate linearly 2.28 mW/⁰C for T_A> +25⁰C.

2) Derate linearly 10.3 mW/⁰C for T_C> +25⁰C.

3) For UA and UB surface mount case outlines: P_T= 1.16 W;

derate linearly 6.6mW/⁰C for T_C> +25⁰C.

3 PIN*

2N2906AUB, 2N2907AUB

*See appendix A for package outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Vdc

V_(BR)

CEO

Collector-Base Cutoff Current

V_CE= 50 Vdc

V_CE= 60 Vdc

Collector-Base Cutoff Current

V_CE= 50 Vdc

Emitter-Base Cutoff Current

V_EB= 4.0 Vdc

mAdc

hAdc

I_CBO

I_CES

I_EBO

hAdc

mAdc

V_EB= 5.0 Vdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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