是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-XDSO-N3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.14 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.6 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-XDSO-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.4 W |
认证状态: | Qualified | 参考标准: | MIL-19500/291M |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 45 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JANS2N2907AUB | MICROSEMI |
类似代替 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
JAN2N2907AUB | MICROSEMI |
功能相似 |
PNP SMALL SIGNAL SILICON TRANSISTOR | |
2N2907ACSM | SEME-LAB |
功能相似 |
HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFAC |
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JANTX2N2907AUBC | MICROSEMI |
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JANTX2N2919 | MICROSEMI |
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BJT | |
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BJT | |
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JANTX2N2944AUB | MICROSEMI |
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