5秒后页面跳转
捷配首页

Datasheet > JANTX1N6663
JANTX1N6663 PDF预览

JANTX1N6663

更新时间： 2024-09-09 14:30:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 109K
描述
Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35,

阅读下载

中文翻译

获取价格

JANTX1N6663 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：DO-35
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.33Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-35JESD-30 代码：O-LALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最大输出电流：0.5 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Qualified参考标准：MIL-19500/587
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANTX1N6663 数据手册

 浏览型号JANTX1N6663的Datasheet PDF文件第2页 
1N6661 thru 1N6663  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” rectifier diode is military qualified to MIL-PRF-19500/587 and  
is ideal for high-reliability applications where a failure cannot be tolerated. These  
industry-recognized 500 mA rated rectifiers for working peak reverse voltages from 225  
to 600 volts are hermetically sealed with void-less-glass construction using an internal  
“Category I” metallurgical bond. The surface mount MELF package configurations are  
also available by adding a “US” suffix (see separate data sheet for 1N6661US thru  
1N6663US). Microsemi also offers numerous other rectifier products to meet higher  
and lower current ratings with various recovery time speed requirements including fast  
and ultrafast device types in both through-hole and surface mount packages.  
DO-35  
(Package C)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6661 thru 1N6663 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Standard recovery 0.5 Amp rectifiers 225 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
Forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 225 to 600 Volts.  
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/587  
Low thermal resistance in small DO-35 package  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (also see  
1N6661US thru 1N6663US)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed void-less hard glass  
with Tungsten slugs  
Thermal Resistance: 160oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
TERMINATIONS: Axial leads are copper clad steel  
with Tin/Lead (Sn/Pb) finish  
•
Average Rectified Forward Current (IO): 0.5 Amps @  
TA = 25ºC and 0.150 Amps at 150ºC  
•
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
•
•
Forward Surge Current: 5 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 150 mg (approx)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
(NOTE 2)  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
SURGE  
CURRENT  
(NOTE1)  
MAXIMUM REVERSE  
CURRENT  
REVERSE  
VOLTAGE  
TYPE  
V
@ 0.4 A  
F
V
V
@ 100μA  
VOLTS  
I
I
@ V  
μA  
I
(PULSED)  
VOLTS  
RWM  
BR  
O
R
RWM  
FSM  
VOLTS  
AMPS  
AMPS  
25oC  
150oC  
0.15  
0.15  
0.15  
25oC  
150oC  
300  
300  
300  
1N6661  
1N6662  
1N6663  
225  
400  
600  
270  
480  
720  
0.5  
0.5  
0.5  
1.0  
1.0  
1.0  
0.05  
0.05  
0.05  
5
5
5
NOTE 1: TA = 25oC, 10 surges of 8.3 ms @ 1 minute intervals  
NOTE 2: Linearly derate at 2.8 mA/ºC between TA=25ºC and 150ºC and 6.0 mA/ºC between TA=150ºC and 175ºC  
Copyright © 2008  
1-03-2008  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

中文翻译

下载PDF

JANTX1N6663 替代型号

型号 品牌 替代类型 描述 数据表
1N6663 MICROSEMI

功能相似

 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS

与JANTX1N6663相关器件

型号 品牌 获取价格 描述 数据表
JANTX1N6663US MICROSEMI

获取价格

 		Rectifier Diode, 1 Element, 0.5A, Silicon, DO-35,
JANTX1N6664 MICROSEMI

获取价格

 		Rectifier Diode, 1A, 100V V(RRM),
JANTX1N6664R MICROSEMI

获取价格

 		Rectifier Diode, 1A, 100V V(RRM),
JANTX1N6665 MICROSEMI

获取价格

 		Rectifier Diode, 1A, 150V V(RRM),
JANTX1N6665R MICROSEMI

获取价格

 		Rectifier Diode, 1A, 150V V(RRM),
JANTX1N6666 MICROSEMI

获取价格

 		Rectifier Diode, 1A, 200V V(RRM),
JANTX1N6666R MICROSEMI

获取价格

 		Rectifier Diode, 1A, 200V V(RRM),
JANTX1N6672 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
JANTX1N6672R SENSITRON

获取价格

 		Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTX1N6672R MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN

与JANTX1N6663相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证