Datasheet > JANTX1N6665R

JANTX1N6665R

更新时间： 2024-09-09 14:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
12页	116K
描述
Rectifier Diode, 1A, 150V V(RRM),

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANTX1N6665R 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.44
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.5 V	最大非重复峰值正向电流：	100 A
最高工作温度：	200 °C	最大输出电流：	1 A
最大重复峰值反向电压：	150 V	最大反向恢复时间：	0.035 µs
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

JANTX1N6665R 数据手册

* METRIC

The documentation and process conversion measures

necessary to comply shall with this document shall be completed

by 3 March 2011.

MIL-PRF-19500/594B

3 December 2010

SUPERSEDING

MIL-PRF-19500/594A

3 July 1998

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND

1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery power rectifier

diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-257AA).

1.3 Maximum ratings (for each leg).

Types

V_R

I_O(1)

I_FSM

t_rr

T_STG

and

V_RWM

T_C= +100°C

t_p= 8.3 ms

and

T_OP

V dc

100

150

200

A dc

1N6664,

+200°C

-65°C

1N6664R

1N6665,

1N6665R

1N6666,

1N6666R

(1) Derate linearly, 100 mA/°C from +100°C to +200°C.

Storage temperature: T_STG= -65°C to +200°C.

Operating temperature: T_J= -65°C to +200°C.

Barometric pressure reduced (altitude operation): 8 mm Hg.

R_θ_JC= 2.5°C/W maximum.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST Online

database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...12

中文翻译

下载PDF

与JANTX1N6665R相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6666	MICROSEMI	获取价格	Rectifier Diode, 1A, 200V V(RRM),
JANTX1N6666R	MICROSEMI	获取价格	Rectifier Diode, 1A, 200V V(RRM),
JANTX1N6672	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
JANTX1N6672R	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTX1N6672R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTX1N6673	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
JANTX1N6673R	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTX1N6674	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 500V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
JANTX1N6674R	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTX1N6674R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN

与JANTX1N6665R相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

64
AIC1781A 电池充电控制器深度解析
2024-09-03

53
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

85
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

96

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTX1N6665R

JANTX1N6665R 技术参数

JANTX1N6665R 数据手册

与JANTX1N6665R相关器件

与JANTX1N6665R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTX1N6665R

JANTX1N6665R 技术参数

JANTX1N6665R 数据手册

与JANTX1N6665R相关器件

与JANTX1N6665R相关文章

您还可以找

您在本页遇到什么问题？