是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | O-MELF-R2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.42 |
Is Samacsys: | N | 最小击穿电压: | 40.9 V |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-MELF-R2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 500 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | 225 | 极性: | BIDIRECTIONAL |
最大功率耗散: | 5 W | 认证状态: | Qualified |
参考标准: | MIL-19500/516 | 最大重复峰值反向电压: | 32.7 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | 20 |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1N6121AUS | MICROSEMI |
完全替代 |
Trans Voltage Suppressor Diode, 500W, 32.7V V(RWM), Bidirectional, 1 Element, Silicon, HER |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6121US | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 32.7V V(RWM), Unidirectional, 1 Element, Silicon, HE | |
JAN1N6122 | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6122 | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon | |
JAN1N6122A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JAN1N6122A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6122A | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor | |
JAN1N6122AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Unidirectional, 1 Element, Silicon, HE | |
JAN1N6122AUS | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor SM | |
JAN1N6122US | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon, | |
JAN1N6122US | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Unidirectional, 1 Element, Silicon, HE |