生命周期: | Active | 包装说明: | O-XALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.37 |
Is Samacsys: | N | 最小击穿电压: | 44.7 V |
击穿电压标称值: | 47 V | 外壳连接: | ISOLATED |
最大钳位电压: | 64.6 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-XALF-W2 | 最大非重复峰值反向功率耗散: | 500 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | UNSPECIFIED | 封装形状: | ROUND |
封装形式: | LONG FORM | 极性: | BIDIRECTIONAL |
最大功率耗散: | 3 W | 认证状态: | Qualified |
最大重复峰值反向电压: | 35.8 V | 子类别: | Transient Suppressors |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6122AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Unidirectional, 1 Element, Silicon, HE | |
JAN1N6122AUS | SENSITRON |
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500 W Transient Voltage Suppressor SM | |
JAN1N6122US | MICROSEMI |
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Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon, | |
JAN1N6122US | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Unidirectional, 1 Element, Silicon, HE | |
JAN1N6123 | MICROSEMI |
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BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6123 | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, 38.8V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JAN1N6123A | MICROSEMI |
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BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6123A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 38.8V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JAN1N6123A | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor | |
JAN1N6123AUS | MICROSEMI |
获取价格 |
暂无描述 |