生命周期: | Active | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.37 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 最小击穿电压: | 48.5 V |
击穿电压标称值: | 51 V | 外壳连接: | ISOLATED |
最大钳位电压: | 70.1 V | 配置: | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e2 |
最大非重复峰值反向功率耗散: | 500 W | 元件数量: | 2 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.5 W |
认证状态: | Qualified | 参考标准: | MIL-19500/516 |
最大重复峰值反向电压: | 38.8 V | 最大反向电流: | 1 µA |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | ZENER | 端子面层: | TIN COPPER |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6123AUS | MICROSEMI |
获取价格 |
暂无描述 | |
JAN1N6123AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 38.8V V(RWM), Unidirectional, 1 Element, Silicon, HE | |
JAN1N6123AUS | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor SM | |
JAN1N6123US | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 38.8V V(RWM), Bidirectional, 1 Element, Silicon, | |
JAN1N6123US | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 38.8V V(RWM), Bidirectional, 1 Element, Silicon | |
JAN1N6124 | MICROSEMI |
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BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6124 | SEMTECH |
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Trans Voltage Suppressor Diode, 500W, 42.6V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JAN1N6124A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6124A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 42.6V V(RWM), Bidirectional, 2 Element, Silicon, HER | |
JAN1N6124A | SENSITRON |
获取价格 |
500 W Transient Voltage Suppressor |