5秒后页面跳转
ISL80111IRAJZ-T PDF预览

ISL80111IRAJZ-T

更新时间: 2024-09-15 20:53:27
品牌 Logo 应用领域
瑞萨 - RENESAS 光电二极管输出元件调节器
页数 文件大小 规格书
17页 1088K
描述
Ultra Low Dropout 1A Low Input Voltage NMOS LDOs; DFN10; Temp Range: -40° to 85°C

ISL80111IRAJZ-T 技术参数

生命周期:Unknown零件包装代码:DFN
包装说明:HVSON, SOLCC10,.11,20针数:10
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:9 weeks
风险等级:5.65可调性:ADJUSTABLE
标称回动电压 1:0.027 VJESD-30 代码:S-PDSO-N10
JESD-609代码:e3长度:3 mm
湿度敏感等级:3功能数量:1
输出次数:1端子数量:10
工作温度TJ-Max:125 °C工作温度TJ-Min:-40 °C
最大输出电流 1:1 A最大输出电压 1:3.3 V
最小输出电压 1:0.8 V封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC10,.11,20
封装形状:SQUARE封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
认证状态:Not Qualified调节器类型:ADJUSTABLE POSITIVE SINGLE OUTPUT LDO REGULATOR
座面最大高度:1 mm子类别:Other Regulators
表面贴装:YES技术:NMOS
端子面层:Matte Tin (Sn) - annealed端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3 mm
Base Number Matches:1

ISL80111IRAJZ-T 数据手册

 浏览型号ISL80111IRAJZ-T的Datasheet PDF文件第2页浏览型号ISL80111IRAJZ-T的Datasheet PDF文件第3页浏览型号ISL80111IRAJZ-T的Datasheet PDF文件第4页浏览型号ISL80111IRAJZ-T的Datasheet PDF文件第5页浏览型号ISL80111IRAJZ-T的Datasheet PDF文件第6页浏览型号ISL80111IRAJZ-T的Datasheet PDF文件第7页 
DATASHEET  
ISL80111, ISL80112, ISL80113  
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs  
FN7841  
Rev.4.01  
Jun 12, 2020  
The ISL80111, ISL80112, and ISL80113 are ultra low dropout  
Features  
LDOs providing the optimum balance between performance, size  
and power consumption in size constrained designs for data  
communication, computing, storage and medical applications.  
These LDOs are specified for 1A, 2A, and 3A of output current and  
• Ultra low dropout: 75mV at 3A, (typical)  
• Excellent V PSRR: 70dB at 1kHz (typical)  
IN  
• ±1.6% assured V  
accuracy for -40ºC < T < +125ºC  
OUT  
J
are optimized for low voltage conversions. Operating with a V of  
IN  
• Very fast load transient response  
0.7V to 3.6V and with a legacy 2.9V to 5.5V on the BIAS, the V  
OUT  
is adjustable from 0.5V to 3.3V. With a V PSRR greater than  
40dB at 100kHz makes these LDOs an ideal choice in noise  
IN  
• Extensive protection and reporting features  
• V range: 0.7V to 3.6V, V  
IN  
range: 0.5V to 3.3V  
OUT  
sensitive applications. The guaranteed ±1.6% V  
accuracy  
OUT  
overall conditions lend these parts to supplying an accurate  
voltage to the latest low voltage digital ICs.  
• Small 10 Ld 3x3 DFN package  
Applications  
An enable input allows the part to be placed into a low quiescent  
current shutdown mode. A submicron CMOS process is utilized for  
this product family to deliver best-in-class analog performance  
and overall value for applications in need of input voltage  
conversions typically below 2.5V. It also has the superior load  
transient regulation unique to a NMOS power stage. These LDOs  
consume significantly lower quiescent current as a function of  
load compared to bipolar LDOs.  
• Noise-sensitive instrumentation and medical systems  
• Data acquisition and data communication systems  
• Storage, telecommunications and server equipment  
• Low voltage DSP, FPGA and ASIC core power supplies  
• Post-regulation of switched mode power supplies  
Related Literature  
For a full list of related documents, visit our website:  
ISL80111, ISL80112, and ISL80113 device pages  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3A  
2A  
1A  
ISL80111, ISL80112, ISL80113  
1.0V  
1.2V ±5%  
1
2
9
VOUT  
VOUT  
VOUT  
VIN  
VIN  
VIN  
C
10µF  
C
10  
IN  
OUT  
10µF  
3.3V ±10%  
VBIAS  
4
VBIAS  
6
3
C
PGOOD  
PG  
BIAS  
1µF  
R
3
1.0kΩ  
7
ADJ  
ENABLE  
EN  
R
4
GND  
1.0kΩ  
5
OPEN-DRAIN COMPATIBLE  
-40  
25  
85  
°
125  
TEMPERATURE ( C)  
FIGURE 2. DROPOUT VOLTAGE OVER-TEMP AND I  
FIGURE 1. TYPICAL APPLICATION SCHEMATIC  
OUT  
100  
80  
60  
40  
20  
0
1.015  
1.010  
1.005  
1.000  
0.995  
0.990  
0.985  
I
= 1A  
OUT  
I
= 0A  
OUT  
I
= 2A  
OUT  
I
= 3A  
OUT  
BIAS = 5V  
V
V
C
= 3.3V  
IN  
OUT  
OUT  
= 2.5V  
= 10µF  
-40  
0
25  
85  
125  
100  
1k  
10k  
FREQUENCY (Hz)  
100k  
1M  
TEMPERATURE (°C)  
FIGURE 3. V PSRR vs LOAD CURRENT (ISL80113)  
IN  
FIGURE 4. V  
vs TEMPERATURE  
ADJ  
FN7841 Rev.4.01  
Jun 12, 2020  
Page 1 of 16  

ISL80111IRAJZ-T 替代型号

型号 品牌 替代类型 描述 数据表
ISL80111IRAJZ INTERSIL

功能相似

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs

与ISL80111IRAJZ-T相关器件

型号 品牌 获取价格 描述 数据表
ISL80111IRAJZ-T7A RENESAS

获取价格

Ultra Low Dropout 1A Low Input Voltage NMOS LDOs; DFN10; Temp Range: -40&deg; to 85&am
ISL80112 INTERSIL

获取价格

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs
ISL80112 RENESAS

获取价格

Ultra Low Dropout 2A Low Input Voltage NMOS LDOs
ISL80112EVAL1Z INTERSIL

获取价格

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs
ISL80112IRAJZ INTERSIL

获取价格

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs
ISL80112IRAJZ-T RENESAS

获取价格

Ultra Low Dropout 2A Low Input Voltage NMOS LDOs; DFN10; Temp Range: -40&deg; to 85&am
ISL80113 INTERSIL

获取价格

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs
ISL80113 RENESAS

获取价格

Ultra Low Dropout 3A Low Input Voltage NMOS LDOs
ISL80113EVAL1Z INTERSIL

获取价格

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs
ISL80113IRAJZ INTERSIL

获取价格

Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs