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ISL80112IRAJZ

更新时间： 2024-11-06 01:05:35
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
17页 761K
描述
Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS LDOs

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ISL80112IRAJZ 数据手册

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Ultra Low Dropout 1A, 2A, 3A Low Input Voltage NMOS  
LDOs  
ISL80111, ISL80112, ISL80113  
Features  
The ISL80111, ISL80112, and ISL80113 are ultra low dropout  
LDOs providing the optimum balance between performance, size  
and power consumption in size constrained designs for data  
communication, computing, storage and medical applications.  
These LDOs are specified for 1A, 2A and 3A of output current and  
• Ultra low dropout: 75mV at 3A, (typ)  
• Excellent V PSRR: 70dB at 1kHz (typ)  
IN  
• ±1.6% guaranteed V  
OUT  
accuracy for -40ºC < T < +125ºC  
J
• Very fast load transient response  
are optimized for low voltage conversions.Operating with a V of  
IN  
• Extensive protection and reporting features  
1V to 3.6V and with a legacy 3.3V to 5V on the BIAS, the V  
OUT  
is  
• V range: 1V to 3.6V, V  
IN OUT  
range: 0.8V to 3.3V  
adjustable from 0.8V to 3.3V. With a V PSRR greater than 40dB  
IN  
at 100kHz makes these LDOs an ideal choice in noise sensitive  
• Small 10 Ld 3x3 DFN package  
applications. The guaranteed ±1.6% V  
accuracy overall  
OUT  
conditions lends these parts to suppling an accurate voltage to  
the latest low voltage digital ICs.  
Applications  
• Noise-sensitive instrumentation and medical systems  
• Data acquisition and data communication systems  
• Storage, telecommunications and server equipment  
• Low voltage DSP, FPGA and ASIC core power supplies  
• Post-regulation of switched mode power supplies  
An enable input allows the part to be placed into a low quiescent  
current shutdown mode. A submicron CMOS process is utilized for  
this product family to deliver best-in-class analog performance  
and overall value for applications in need of input voltage  
conversions typically below 2.5V. It also has the superior load  
transient regulation unique to a NMOS power stage. These LDOs  
consume significantly lower quiescent current as a function of  
load compared to bipolar LDOs.  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
ISL80111, ISL80112, ISL80113  
3A  
2A  
1A  
1.0V  
VOUT  
1.2V ±5%  
1
2
9
VOUT  
VOUT  
VIN  
VIN  
VIN  
C
10µF  
C
IN  
10  
OUT  
10µF  
3.3V ±10%  
VBIAS  
4
7
VBIAS  
6
3
C
PGOOD  
PG  
BIAS  
1µF  
R
1.0kΩ  
3
ADJ  
ENABLE  
EN  
R
4
1.0kΩ  
GND  
5
OPEN DRAIN COMPATIBLE  
-40  
25  
85  
125  
TEMPERATURE (°C)  
FIGURE 1. TYPICAL APPLICATION SCHEMATIC  
FIGURE 2. DROPOUT VOLTAGE OVER-TEMP AND I  
OUT  
100  
80  
60  
40  
20  
0
1.015  
1.010  
1.005  
1.000  
0.995  
0.990  
0.985  
I
= 1A  
OUT  
I
= 0A  
OUT  
I
= 2A  
OUT  
I
= 3A  
OUT  
BIAS = 5V  
V
V
C
= 3.3V  
IN  
OUT  
OUT  
= 2.5V  
= 10µF  
-40  
0
25  
85  
125  
100  
1k  
10k  
FREQUENCY (Hz)  
100k  
1M  
TEMPERATURE (°C)  
FIGURE 3. V PSRR vs LOAD CURRENT (ISL80113)  
IN  
FIGURE 4. ΔV vs TEMPERATURE  
ADJ  
November 1, 2013  
FN7841.2  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2012, 2013. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
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