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ISL73127RHX/SAMPLE

更新时间： 2024-11-18 05:39:43
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英特矽尔 - INTERSIL 晶体晶体管
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Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

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ISL73127RHX/SAMPLE 数据手册

 浏览型号ISL73127RHX/SAMPLE的Datasheet PDF文件第2页浏览型号ISL73127RHX/SAMPLE的Datasheet PDF文件第3页浏览型号ISL73127RHX/SAMPLE的Datasheet PDF文件第4页浏览型号ISL73127RHX/SAMPLE的Datasheet PDF文件第5页 
ISL73096RH, ISL73127RH, ISL73128RH  
®
Data Sheet  
March 23, 2009  
FN6475.2  
Radiation Hardened Ultra High Frequency  
NPN/PNP Transistor Arrays  
Features  
• Electrically Screened to SMD # 5962-07218  
The ISL73096RH, ISL73127RH and ISL73128RH are  
radiation hardened bipolar transistor arrays. The  
• QML Qualified per MIL-PRF-38535 Requirements  
• Radiation Environment  
ISL73096RH consists of three NPN transistors and two PNP  
transistors on a common substrate. The ISL73127RH  
consists of five NPN transistors on a common substrate. The  
ISL73128RH consists of five PNP transistors on a common  
substrate. One of our bonded wafer, dielectrically isolated  
fabrication processes provides an immunity to Single Event  
Latch-up and the capability of highly reliable performance in  
any radiation environment.  
5
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)  
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation  
• NPN Gain Bandwidth Product (F ) . . . . . . . . .8GHz (Typ)  
T
• NPN Current Gain (h ). . . . . . . . . . . . . . . . . . . 130 (Typ)  
FE  
• NPN Early Voltage (V ) . . . . . . . . . . . . . . . . . . . 50V (Typ)  
A
• PNP Gain Bandwidth Product (F ). . . . . . . . 5.5GHz (Typ)  
T
The high gain-bandwidth product and low noise figure of  
these transistors make them ideal for use in high frequency  
amplifier and mixer applications. Monolithic construction of  
the NPN and PNP transistors provides the closest electrical  
and thermal matching possible. Access is provided to each  
terminal of the transistors for maximum application flexibility.  
• PNP Current Gain (h ). . . . . . . . . . . . . . . . . . . . 60 (Typ)  
FE  
• PNP Early Voltage (V ) . . . . . . . . . . . . . . . . . . . 20V (Typ)  
A
• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)  
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)  
• Complete Isolation Between Transistors  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
Applications  
• High Frequency Amplifiers and Mixers  
- Refer to Application Note AN9315  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-07218. A “hot-link” is provided  
on our website for downloading.  
• High Frequency Converters  
• Synchronous Detector  
Ordering Information  
ORDERING NUMBER  
INTERNAL MKT. NUMBER  
ISL73096RHVX  
TEMP. RANGE (°C)  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
5962F0721801V9A  
5962F0721801VXC  
5962F0721802V9A  
ISL73096RHVF  
ISL73127RHVX  
5962F0721802VXC  
5962F0721803V9A  
ISL73127RHVF  
ISL73128RHVX  
5962F0721803VXC  
ISL73096RHF/PROTO  
ISL73096RHX/SAMPLE  
ISL73127RHF/PROTO  
ISL73127RHX/SAMPLE  
ISL73128RHF/PROTO  
ISL73128RHX/SAMPLE  
ISL73128RHVF  
ISL73096RHF/PROTO  
ISL73096RHX/SAMPLE  
ISL73127RHF/PROTO  
ISL73127RHX/SAMPLE  
ISL73128RHF/PROTO  
ISL73128RHX/SAMPLE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2007, 2009. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners..  
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