DATASHEET
ISL72814SEH, ISL73814SEH
16-Channel Driver Circuit with an Integrated Decoder
R34DS0002EU0100
Rev.1.00
Feb 7, 2019
The ISL72814SEH and ISL73814SEH are radiation
hardened high-voltage, high-current, driver circuit ICs
fabricated using the Renesas proprietary PR40
Silicon-On-Insulator (SOI) process technology to
mitigate single-event effects. The devices integrate
16 driver channels that feature a high-voltage (42V),
high-current (700mA) open-emitter PNP output stage.
Features
• Electrically screened to DLA SMD 5962-18221
• Integrated 4-bit to 16-channel decoder
• High current outputs: 700mA
• High voltage outputs: 42V
• Ultra low saturation voltage: 1.35V maximum at
500mA
To further reduce solution size, the ISL72814SEH and
ISL73814SEH integrate a 4-bit, 16-channel decoder with
Enable. This conveniently allows you to select 1 of 16
available driver channels or disable all channels. The
inputs to the decoder are TTL and CMOS compatible,
allowing an easy interface to FPGAs and
• Internal clamping diodes for inductive loads
• Wide operating V supply range 3V to 13.2V
CC
• Full military temperature range operation
microprocessors.
• T = -55°C to +125°C
A
The ISL7x814SEH devices operate across the military
temperature range from -55°C to +125°C and are
available in a 28 lead hermetically sealed Ceramic Dual
Flatpack (CDFP) package or die.
• T = -55°C to +150°C
J
• Radiation acceptance testing - ISL72814SEH
• HDR (50-300rad(Si)/s): 100krad(Si)
• LDR (0.01rad(Si)/s): 75krad(Si)
Applications
• RF waveguide and coaxial switches
• Radiation acceptance testing - ISL73814SEH
• LDR (0.01rad(Si)/s): 75krad(Si)
• Relays
• Line drivers
• Logic buffers
• Lamp drivers
• SEE hardness (see SEE report for details)
2
• No SEB/SEL LET
V
= 34V: 86MeV•cm /mg
TH, CH
Related Literature
For a full list of related documents, visit our website:
• ISL72814SEH and ISL73814SEH device pages
3.3V
RF1
RF2
28V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
+
-
VCC
A0
A1
A2
A3
EN
CH0
CH1
CH2
CH3
CH4
µController
ISL72814SEH CH5
CH15
CH14
CH13
CH12
CH11
CH6
CH7
CH8
CH9
RF5
RF6
28V
-
+
-55°C
25°C
125°C
RF3
RF4
0.4
-
+
0.2
28V
CH10
GND COM
0.0
0
100
200
300
400
(mA)
500
600
700
I
CHx
Figure 1. RF Switching Module
Figure 2. VCH(SAT) vs ICHx vs Temperature
R34DS0002EU0100 Rev.1.00
Feb 7, 2019
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