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ISL73128EHVF

更新时间： 2024-11-18 21:00:59
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
11页 402K
描述
RF POWER TRANSISTOR

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ISL73128EHVF 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：,Reach Compliance Code：compliant
风险等级：5.58JESD-609代码：e4
峰值回流温度（摄氏度）：260端子面层：GOLD
处于峰值回流温度下的最长时间：30Base Number Matches：1

ISL73128EHVF 数据手册

 浏览型号ISL73128EHVF的Datasheet PDF文件第2页浏览型号ISL73128EHVF的Datasheet PDF文件第3页浏览型号ISL73128EHVF的Datasheet PDF文件第4页浏览型号ISL73128EHVF的Datasheet PDF文件第5页浏览型号ISL73128EHVF的Datasheet PDF文件第6页浏览型号ISL73128EHVF的Datasheet PDF文件第7页 
Radiation Hardened Ultra High Frequency NPN/PNP  
Transistor Arrays  
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,  
ISL73128EH  
The ISL73096, ISL73127 and ISL73128 are radiation  
hardened bipolar transistor arrays. The ISL73096 consists of  
Features  
• Electrically screened to SMD # 5962-07218  
• QML qualified per MIL-PRF-38535 requirements  
three NPN transistors and two PNP transistors on a common  
substrate. The ISL73127 consists of five NPN transistors on a  
common substrate. The ISL73128 consists of five PNP  
transistors on a common substrate.  
• Radiation tolerance  
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)  
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*  
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation  
The ISL73096EH, ISL73127EH and ISL73128EH devices  
encompass all of the production testing of the ISL73096RH,  
ISL73127RH and ISL73128RH devices and additionally are  
tested in the Intersil Enhanced Low Dose Rate Sensitivity  
(ELDERS) product manufacturing flow.  
• NPN gain bandwidth product (F ) . . . . . . . . . . . . . . 8GHz (typ)  
T
• NPN current gain (h ) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)  
FE  
One of our bonded wafer, dielectrically isolated fabrication  
processes provides an immunity to single event latch-up and  
the capability of highly reliable performance in a radiation  
environment.  
• NPN early voltage (V ). . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)  
A
• PNP gain bandwidth product (F ). . . . . . . . . . . . . 5.5GHz (typ)  
T
• PNP current gain (h ). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)  
FE  
• PNP early voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)  
A
The high gain-bandwidth product and low noise figure of these  
transistors make them ideal for use in high frequency  
amplifier and mixer applications. Monolithic construction of  
the NPN and PNP transistors provides the closest electrical  
and thermal matching possible. Access is provided to each  
terminal of the transistors for maximum application flexibility.  
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)  
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . .<1pA (typ)  
• Complete isolation between transistors  
* Limit established by characterization.  
Related Literature  
• AN1503, Amplifier Design Using ISL73096RH,  
ISL73127RH, ISL73128RH Transistor Arrays  
Applications  
• High frequency amplifiers and mixers  
• High frequency converters  
• TID REPORT for the Radiation Hardened UHF NPN/PNP  
transistor array  
• Synchronous detector  
120  
115  
110  
105  
100  
95  
75  
70  
65  
60  
55  
50  
45  
40  
90  
85  
80  
0
50  
100  
150  
200  
250  
300  
0
50  
100  
150  
krad(Si)  
200  
250  
300  
krad(Si)  
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW  
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE  
(HDR) TO 300krads(Si)  
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW  
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE  
(HDR) TO 300krads(Si)  
June 27, 2014  
FN6475.4  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
1
All other trademarks mentioned are the property of their respective owners.  
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