Datasheet > ISL73592SEH

ISL73592SEH

更新时间： 2024-11-19 14:57:27

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
23页	785K
描述
Radiation Hardened 100μA and 1mA Precision Current Sources

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ISL73592SEH 数据手册

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ISL70591SEH, ISL70592SEH, ISL73591SEH, ISL73592SEH

Radiation Hardened 100µA and 1mA Precision Current Sources

FN9335

Rev.0.00

Aug 30, 2018

The ISL70591SEH, ISL73591SEH, ISL70592SEH, and

ISL73592SEH are radiation hardened precision 100µA

Features

• Electrically screened to DLA SMD 5962-18217

and 1mA current source ICs. The devices have excellent

accuracy of ±1% over a wide operating voltage range of

3V to 40V and over a temperature range of -55°C to

+125°C. Fabricated with the Renesas proprietary PR40

Silicon On Insulator (SOI) process, the devices are

immune to single event latch-up.

• Wide operating voltage range: 3V to 40V

• High initial accuracy (+V = 20V at +25°C):

• ISL7x591SEH: ±0.34%

• ISL7x592SEH: ±0.30%

The high output impedance of the devices make them

insensitive to the voltage drops across long lines. They

can withstand a forward operating voltage of 40V and a

reverse voltage of -0.5V.

• High output impedance:

• ISL7x591SEH: 189MΩ (typical)

• ISL7x592SEH: 14MΩ (typical)

• Completely floating: No ground connection

The ISL7x591SEH and ISL7x592SEH are two terminal

floating current sources and that allows them to be used

in high side, low side, and dual side load applications

such as sensor excitation, biasing networks, low voltage

references, floating voltage references, and ramp

generators. The current sources were primarily designed

for thermistor and other sensor excitation applications

widely used in space crafts.

• Radiation acceptance testing - ISL70591SEH and

ISL70592SEH

• High dose rate (50-300rad(Si)/s): 100krad(Si)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

• Radiation acceptance testing - ISL73591SEH and

ISL73592SEH

The ISL7x591SEH and ISL7x592SEH are available in a

4 Ld ceramic flatpack and die forms. The temperature

range is -55°C to +125°C.

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

• SEE hardness

• No SEB/SEL LET +V = 35V: 86MeV•cm /mg

TH,

Applications

• SET duration (time recovery) ≤125µs

• Sensor excitation

• Biasing network

Related Literature

For a full list of related documents, visit our website:

• Low voltage references

• Ramp generators

• ISL70591SEH, ISL70592SEH, ISL73591SEH, and

ISL73592SEH product pages.

FN9335 Rev.0.00

Aug 30, 2018

Page 1 of 23

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