DATASHEET
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH
FN6475
Rev 4.00
June 27, 2014
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
The ISL73096, ISL73127 and ISL73128 are radiation
Features
hardened bipolar transistor arrays. The ISL73096 consists of
• Electrically screened to SMD # 5962-07218
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
• NPN gain bandwidth product (F ) . . . . . . . . . . . . . . 8GHz (typ)
T
• NPN current gain (h ) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)
FE
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment.
• NPN early voltage (V ). . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)
A
• PNP gain bandwidth product (F ). . . . . . . . . . . . . 5.5GHz (typ)
T
• PNP current gain (h ). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)
FE
• PNP early voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)
A
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . .<1pA (typ)
• Complete isolation between transistors
* Limit established by characterization.
Related Literature
• AN1503, Amplifier Design Using ISL73096RH,
ISL73127RH, ISL73128RH Transistor Arrays
Applications
• High frequency amplifiers and mixers
• High frequency converters
• TID REPORT for the Radiation Hardened UHF NPN/PNP
transistor array
• Synchronous detector
120
115
110
105
100
95
75
70
65
60
55
50
45
40
90
85
80
0
50
100
150
200
250
300
0
50
100
150
krad(Si)
200
250
300
krad(Si)
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
FN6475 Rev 4.00
June 27, 2014
Page 1 of 11
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