Datasheet > ISL6612BCB

ISL6612BCB

更新时间： 2024-09-16 20:23:31

品牌	Logo	应用领域
瑞萨 - RENESAS		驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
12页	615K
描述
3A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ISL6612BCB 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	SOP, SOP8,.25
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	1 week	风险等级：	5.21
高边驱动器：	YES	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e0
长度：	4.9 mm	湿度敏感等级：	1
功能数量：	1	端子数量：	8
最高工作温度：	85 °C	最低工作温度：
标称输出峰值电流：	3 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	5/12,12 V
认证状态：	Not Qualified	座面最大高度：	1.75 mm
子类别：	MOSFET Drivers	最大供电电压：	13.2 V
最小供电电压：	7 V	标称供电电压：	12 V
电源电压1-最大：	13.2 V	电源电压1-分钟：	5 V
电源电压1-Nom：	12 V	表面贴装：	YES
温度等级：	OTHER	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3.9 mm	Base Number Matches：	1

ISL6612BCB 数据手册

DATASHEET

NOT RECOMMENDED FOR NEW DESIGNS

RECOMMENDED REPLACEMENT PARTS

ISL6622A, ISL6622B

ISL6612B, ISL6613B

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

FN9205

Rev.4.00

May 1, 2012

The ISL6612B and ISL6613B are high frequency MOSFET

drivers specifically designed to drive upper and lower power

Features

• Pin-to-pin Compatible with HIP6601 SOIC family

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Low VCC Rising Threshold (7V) for IBA Applications.

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

The ISL6612B drives the upper gate to above rising VCC

POR (7V), while the lower gate can be independently driven

over a range from 5V to 12V. The ISL6613B drives both

upper and lower gates over a range of 5V to 12V. This drive-

voltage provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses. These drivers are optimized for POL

DC/DC Converters for IBA Systems.

- Auto-zero of r

DS(ON)

Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial start-up.

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• Core Regulators for Intel and AMD Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 for Power Train Design, Layout

Guidelines, and Feedback Compensation Design

FN9205 Rev.4.00

May 1, 2012

Page 1 of 12

12 3 4 5 6 7...12

中文翻译

下载PDF

与ISL6612BCB相关器件

型号	品牌	获取价格	描述	数据表
ISL6612BCB-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BCB-T	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8
ISL6612BCBZ	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BCBZ-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BCBZ-T	RENESAS	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; DFN10, SOIC8; Temp Ra
ISL6612BCR	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BCR	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10
ISL6612BCR-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BCR-T	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10
ISL6612BCRZ	RENESAS	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; DFN10, SOIC8; Temp Ra

与ISL6612BCB相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6612BCB

ISL6612BCB 技术参数

ISL6612BCB 数据手册

与ISL6612BCB相关器件

与ISL6612BCB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6612BCB

ISL6612BCB 技术参数

ISL6612BCB 数据手册

与ISL6612BCB相关器件

与ISL6612BCB相关文章

您还可以找

您在本页遇到什么问题？