是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | PLASTIC, MS-012AA, SOIC-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.22 | Is Samacsys: | N |
高边驱动器: | YES | 接口集成电路类型: | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
标称输出峰值电流: | 3 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 电源: | 5/12,12 V |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 13.2 V |
最小供电电压: | 7 V | 标称供电电压: | 12 V |
电源电压1-最大: | 13.2 V | 电源电压1-分钟: | 5 V |
电源电压1-Nom: | 12 V | 表面贴装: | YES |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISL6612BIB-T | INTERSIL |
获取价格 |
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP | |
ISL6612BIB-T | RENESAS |
获取价格 |
3A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8 | |
ISL6612BIBZ | RENESAS |
获取价格 |
3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 | |
ISL6612BIBZ | INTERSIL |
获取价格 |
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP | |
ISL6612BIBZ-T | INTERSIL |
获取价格 |
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP | |
ISL6612BIBZ-T | RENESAS |
获取价格 |
3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 | |
ISL6612BIR | INTERSIL |
获取价格 |
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP | |
ISL6612BIR | RENESAS |
获取价格 |
3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10 | |
ISL6612BIR-T | INTERSIL |
获取价格 |
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP | |
ISL6612BIR-T | RENESAS |
获取价格 |
3A HALF BRDG BASED MOSFET DRIVER, PDSO10, 3 X 3 MM, PLASTIC, DFN-10 |