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ISL6612BIB PDF预览

ISL6612BIB

更新时间: 2024-11-06 20:23:31
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
12页 615K
描述
3A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, MS-012AA, SOIC-8

ISL6612BIB 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:PLASTIC, MS-012AA, SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.22Is Samacsys:N
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:3 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:5/12,12 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:13.2 V
最小供电电压:7 V标称供电电压:12 V
电源电压1-最大:13.2 V电源电压1-分钟:5 V
电源电压1-Nom:12 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

ISL6612BIB 数据手册

 浏览型号ISL6612BIB的Datasheet PDF文件第2页浏览型号ISL6612BIB的Datasheet PDF文件第3页浏览型号ISL6612BIB的Datasheet PDF文件第4页浏览型号ISL6612BIB的Datasheet PDF文件第5页浏览型号ISL6612BIB的Datasheet PDF文件第6页浏览型号ISL6612BIB的Datasheet PDF文件第7页 
DATASHEET  
NOT RECOMMENDED FOR NEW DESIGNS  
RECOMMENDED REPLACEMENT PARTS  
ISL6622A, ISL6622B  
ISL6612B, ISL6613B  
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP  
FN9205  
Rev.4.00  
May 1, 2012  
The ISL6612B and ISL6613B are high frequency MOSFET  
drivers specifically designed to drive upper and lower power  
Features  
• Pin-to-pin Compatible with HIP6601 SOIC family  
N-Channel MOSFETs in a synchronous rectified buck  
converter topology. These drivers combined with HIP63xx or  
ISL65xx Multi-Phase Buck PWM controllers and N-Channel  
MOSFETs form complete core-voltage regulator solutions for  
advanced microprocessors.  
• Dual MOSFET Drives for Synchronous Rectified Bridge  
• Low VCC Rising Threshold (7V) for IBA Applications.  
• Advanced Adaptive Zero Shoot-Through Protection  
- Body Diode Detection  
The ISL6612B drives the upper gate to above rising VCC  
POR (7V), while the lower gate can be independently driven  
over a range from 5V to 12V. The ISL6613B drives both  
upper and lower gates over a range of 5V to 12V. This drive-  
voltage provides the flexibility necessary to optimize  
applications involving trade-offs between gate charge and  
conduction losses. These drivers are optimized for POL  
DC/DC Converters for IBA Systems.  
- Auto-zero of r  
DS(ON)  
Conduction Offset Effect  
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency  
• 36V Internal Bootstrap Schottky Diode  
• Bootstrap Capacitor Overcharging Prevention  
• Supports High Switching Frequency (up to 2MHz)  
- 3A Sinking Current Capability  
- Fast Rise/Fall Times and Low Propagation Delays  
An advanced adaptive zero shoot-through protection is  
integrated to prevent both the upper and lower MOSFETs  
from conducting simultaneously and to minimize the dead  
time. These products add an overvoltage protection feature  
operational before VCC exceeds its turn-on threshold, at  
which the PHASE node is connected to the gate of the low  
side MOSFET (LGATE). The output voltage of the converter  
is then limited by the threshold of the low side MOSFET,  
which provides some protection to the microprocessor if the  
upper MOSFET(s) is shorted during initial start-up.  
• Three-State PWM Input for Output Stage Shutdown  
• Three-State PWM Input Hysteresis for Applications With  
Power Sequencing Requirement  
• Pre-POR Overvoltage Protection  
• VCC Undervoltage Protection  
• Expandable Bottom Copper Pad for Enhanced Heat  
Sinking  
• Dual Flat No-Lead (DFN) Package  
These drivers also feature a three-state PWM input which,  
working together with Intersil’s multi-phase PWM controllers,  
prevents a negative transient on the output voltage when the  
output is shut down. This feature eliminates the Schottky  
diode that is used in some systems for protecting the load  
from reversed output voltage events.  
- Near Chip-Scale Package Footprint; Improves PCB  
Efficiency and Thinner in Profile  
• Pb-Free (RoHS Compliant)  
Applications  
• Optimized for POL DC/DC Converters for IBA Systems  
®
®
• Core Regulators for Intel and AMD Microprocessors  
• High Current DC/DC Converters  
• High Frequency and High Efficiency VRM and VRD  
Related Literature  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
• Technical Brief TB417 for Power Train Design, Layout  
Guidelines, and Feedback Compensation Design  
FN9205 Rev.4.00  
May 1, 2012  
Page 1 of 12  

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