Datasheet > ISL6612BCRZ

ISL6612BCRZ

更新时间： 2024-11-06 20:23:31

品牌	Logo	应用领域
瑞萨 - RENESAS		驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
12页	615K
描述
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; DFN10, SOIC8; Temp Range: See Datasheet

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ISL6612BCRZ 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	DFN, SOIC	包装说明：	HVSON, SOLCC10,.11,20
针数：	10, 8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	1 week	风险等级：	5.56
Is Samacsys：	N	高边驱动器：	YES
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER	JESD-30 代码：	S-PDSO-N10
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	3	功能数量：	1
端子数量：	10	最高工作温度：	85 °C
最低工作温度：		标称输出峰值电流：	3 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装等效代码：	SOLCC10,.11,20	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	峰值回流温度（摄氏度）：	260
电源：	5/12,12 V	认证状态：	Not Qualified
座面最大高度：	1 mm	子类别：	MOSFET Drivers
最大供电电压：	13.2 V	最小供电电压：	7 V
标称供电电压：	12 V	电源电压1-最大：	13.2 V
电源电压1-分钟：	5 V	电源电压1-Nom：	12 V
表面贴装：	YES	温度等级：	OTHER
端子面层：	Matte Tin (Sn) - annealed	端子形式：	NO LEAD
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	3 mm
Base Number Matches：	1

ISL6612BCRZ 数据手册

DATASHEET

NOT RECOMMENDED FOR NEW DESIGNS

RECOMMENDED REPLACEMENT PARTS

ISL6622A, ISL6622B

ISL6612B, ISL6613B

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

FN9205

Rev.4.00

May 1, 2012

The ISL6612B and ISL6613B are high frequency MOSFET

drivers specifically designed to drive upper and lower power

Features

• Pin-to-pin Compatible with HIP6601 SOIC family

N-Channel MOSFETs in a synchronous rectified buck

converter topology. These drivers combined with HIP63xx or

ISL65xx Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Low VCC Rising Threshold (7V) for IBA Applications.

• Advanced Adaptive Zero Shoot-Through Protection

- Body Diode Detection

The ISL6612B drives the upper gate to above rising VCC

POR (7V), while the lower gate can be independently driven

over a range from 5V to 12V. The ISL6613B drives both

upper and lower gates over a range of 5V to 12V. This drive-

voltage provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses. These drivers are optimized for POL

DC/DC Converters for IBA Systems.

- Auto-zero of r

DS(ON)

Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (up to 2MHz)

- 3A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

An advanced adaptive zero shoot-through protection is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize the dead

time. These products add an overvoltage protection feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial start-up.

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage Protection

• VCC Undervoltage Protection

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• Dual Flat No-Lead (DFN) Package

These drivers also feature a three-state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature eliminates the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Optimized for POL DC/DC Converters for IBA Systems

• Core Regulators for Intel and AMD Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mount Devices

(SMDs)”

• Technical Brief TB417 for Power Train Design, Layout

Guidelines, and Feedback Compensation Design

FN9205 Rev.4.00

May 1, 2012

Page 1 of 12

12 3 4 5 6 7...12

中文翻译

下载PDF

与ISL6612BCRZ相关器件

型号	品牌	获取价格	描述	数据表
ISL6612BCRZ-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BECB	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BECB	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, SOIC-8
ISL6612BECB-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BECBZ	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BECBZ	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, SOIC-8
ISL6612BECBZ-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BECBZ-T	RENESAS	获取价格	3A HALF BRDG BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, PLASTIC, SOIC-8
ISL6612BEIB	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612BEIB-T	INTERSIL	获取价格	Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

与ISL6612BCRZ相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6612BCRZ

ISL6612BCRZ 技术参数

ISL6612BCRZ 数据手册

与ISL6612BCRZ相关器件

与ISL6612BCRZ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ISL6612BCRZ

ISL6612BCRZ 技术参数

ISL6612BCRZ 数据手册

与ISL6612BCRZ相关器件

与ISL6612BCRZ相关文章

您还可以找

您在本页遇到什么问题？