5秒后页面跳转
捷配首页

Datasheet > IS7-1845ASRH-QS9000
IS7-1845ASRH-QS9000 PDF预览

IS7-1845ASRH-QS9000

更新时间： 2024-11-11 21:08:23
品牌 Logo 应用领域
瑞萨 - RENESAS 信息通信管理开关
页数 文件大小 规格书
3页 145K
描述
SWITCHING CONTROLLER

阅读下载

中文翻译

获取价格

IS7-1845ASRH-QS9000 技术参数

生命周期：Transferred包装说明：DIP,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.7
模拟集成电路 - 其他类型：SWITCHING CONTROLLER控制模式：CURRENT-MODE
控制技术：PULSE WIDTH MODULATION最大输入电压：20 V
最小输入电压：12 VJESD-30 代码：R-CDIP-T8
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-50 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：DIP
封装形状：RECTANGULAR封装形式：IN-LINE
表面贴装：NO技术：BICMOS
温度等级：AUTOMOTIVE端子形式：THROUGH-HOLE
端子位置：DUAL总剂量：300k Rad(Si) V
Base Number Matches：1

IS7-1845ASRH-QS9000 数据手册

 浏览型号IS7-1845ASRH-QS9000的Datasheet PDF文件第2页浏览型号IS7-1845ASRH-QS9000的Datasheet PDF文件第3页 
Single Event Radiation Hardened High Speed, Current  
Mode PWM  
IS-1845ASRH, IS-1845ASEH  
Features  
• Electrically Screened to DSCC SMD # 5962-01509  
The IS-1845ASRH, IS-1845ASEH are  
designed to be used in switching  
power supplies operating in current-  
mode. The rising edge of the on-chip  
• QML Qualified per MIL-PRF-38535 Requirements  
TM  
• Radiation Environment  
- High Dose Rate. . . . . . . . . . . . . . . . . . . . .300 krad(SI) (Max)  
- Low Dose Rate . . . . . . . . . . . . . . . . . . . . . .50 krad(SI) (Max)  
- SEL Immune . . . . . . . . . . . . . . . . . . . . Dielectrically Isolated  
oscillator turns on the output. Turn-off  
is controlled by the current sense comparator and occurs when  
the sensed current reaches a peak controlled by the error  
amplifier.  
2
- SEU Immune. . . . . . . . . . . . . . . . . . . . . . . . 35MeV/mg/cm  
2
-6  
2
Constructed with Intersil’s Rad Hard Silicon Gate (RSG)  
dielectrically isolated BiCMOS process, these devices are  
immune to single event latch-up and have been specifically  
designed to provide a high level of immunity to single event  
transients. All specified parameters are guaranteed and tested  
for 300krad(Si) total dose performance at a high dose rate and  
50krad(Si) total dose at a low dose rate.  
- SEU Cross-Section at 89MeV/mg/cm . . . . . . 5 x 10 cm  
• Low Start-up Current . . . . . . . . . . . . . . . . . . . . . . . 100µA (Typ)  
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . 80ns (Typ)  
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . 12V to 20V  
• High Output Drive. . . . . . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ)  
• Undervoltage Lockout . . . . . 8.8V Start (Typ), 8.2V Stop (Typ)  
Detailed Electrical Specifications for these devices are  
contained in the SMD 5962-01509. A “hot-link” is also  
provided on our website for downloading the SMD.  
Applications  
• Current-Mode Switching Power Supplies  
• Control of High Current FET Drivers  
• Motor Speed and Direction Control  
Pin Configurations  
IS7-1845ASRH, IS7-1845ASEH  
(8 LD CDIP2-T8 SBDIP)  
TOP VIEW  
IS9-1845ASRH, IS9-1845ASEH  
(18 LD FLATPACK)  
TOP VIEW  
NC  
COMP  
VFB  
1
2
3
4
5
6
7
8
9
NC  
18  
17  
COMP  
VFB  
1
2
3
4
8
7
6
5
VREF  
VCC  
OUT  
GND  
VREF  
VCC  
VC  
16  
15  
14  
13  
12  
11  
10  
ISENSE  
RTCT  
NC  
NC  
OUT  
NC  
NC  
ISENSE  
RTCT  
NC  
GND  
OSCGND  
NC  
NOTES:  
1. Grounding the COMP pin does not inhibit the output. The output may be inhibited by applying >1.2V to the ISENSE pin.  
2. This part should be operated with C = 3.3nF and R = 10k timing components only.  
t
t
July 13, 2012  
FN9001.5  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2003, 2008, 2012. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
1
123

中文翻译

下载PDF

与IS7-1845ASRH-QS9000相关器件

型号 品牌 获取价格 描述 数据表
IS71V08F32AS08-7070BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32AS08-7085BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32AS08-8585BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32BS08-7070BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32BS08-8585BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32CS08-7070BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32CS08-8570BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32CS08-8585BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32DS08-7070BI ISSI

获取价格

 		Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, MINI, BGA-73
IS71V08F32EST08-7070BI ISSI

获取价格

 		Memory Circuit, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, 0.80 MM PITCH, FBGA-73

与IS7-1845ASRH-QS9000相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证