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IS63LV1024-8KI PDF预览

IS63LV1024-8KI

更新时间: 2024-11-05 22:51:43
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 71K
描述
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

IS63LV1024-8KI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.400 INCH, PLASTIC, MS-027, SOJ-32针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.43
Is Samacsys:N最长访问时间:8 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0长度:20.95 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ32,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:3.75 mm最大待机电流:0.01 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.17 mA最大供电电压 (Vsup):3.45 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS63LV1024-8KI 数据手册

 浏览型号IS63LV1024-8KI的Datasheet PDF文件第2页浏览型号IS63LV1024-8KI的Datasheet PDF文件第3页浏览型号IS63LV1024-8KI的Datasheet PDF文件第4页浏览型号IS63LV1024-8KI的Datasheet PDF文件第5页浏览型号IS63LV1024-8KI的Datasheet PDF文件第6页浏览型号IS63LV1024-8KI的Datasheet PDF文件第7页 
®
IS63LV1024  
128K x 8 HIGH-SPEED CMOS STATIC RAM  
3.3V REVOLUTIONARY PINOUT  
ISSI  
SEPTEMBER 2000  
FEATURES  
DESCRIPTION  
The ISSI IS63LV1024 is a very high-speed, low power,  
131,072-word by 8-bit CMOS static RAM in revolutionary  
pinout. The IS63LV1024 is fabricated using ISSI's  
high-performance CMOS technology. This highly reliable  
process coupled with innovative circuit design  
techniques, yields higher performance and low power  
consumption devices.  
• High-speed access times:  
8, 10, 12 and 15 ns  
• High-performance, low-powerCMOSprocess  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
options  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 250 µW (typical) with CMOS input levels.  
CE power-down  
• Fully static operation: no clock or refresh  
required  
The IS63LV1024 operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
• Packages available:  
– 32-pin 300-mil SOJ  
– 32-pin 400-mil SOJ  
– 32-pin TSOP (Type II)  
FUNCTIONAL BLOCK DIAGRAM  
128K X 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. H  
10/02/00  

IS63LV1024-8KI 替代型号

型号 品牌 替代类型 描述 数据表
IS63LV1024-8KL ISSI

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128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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