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IS63LV1024L-10JLI PDF预览

IS63LV1024L-10JLI

更新时间: 2024-11-05 04:22:59
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
18页 615K
描述
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

IS63LV1024L-10JLI 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ, SOJ32,.34针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:8 weeks
风险等级:1.4Is Samacsys:N
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e3
长度:20.955 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
认证状态:Not Qualified座面最大高度:3.56 mm
最大待机电流:0.0015 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.105 mA
最大供电电压 (Vsup):3.45 V最小供电电压 (Vsup):3.15 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:7.62 mm
Base Number Matches:1

IS63LV1024L-10JLI 数据手册

 浏览型号IS63LV1024L-10JLI的Datasheet PDF文件第2页浏览型号IS63LV1024L-10JLI的Datasheet PDF文件第3页浏览型号IS63LV1024L-10JLI的Datasheet PDF文件第4页浏览型号IS63LV1024L-10JLI的Datasheet PDF文件第5页浏览型号IS63LV1024L-10JLI的Datasheet PDF文件第6页浏览型号IS63LV1024L-10JLI的Datasheet PDF文件第7页 
IS63LV1024  
IS63LV1024L  
128K x 8 HIGH-SPEED CMOS STATIC RAM  
3.3V REVOLUTIONARY PINOUT  
JANUARY2007  
DESCRIPTION  
FEATURES  
TheISSIIS63LV1024/IS63LV1024Lisaveryhigh-speed,  
low power, 131,072-word by 8-bit CMOS static RAM in  
revolutionarypinout.TheIS63LV1024/IS63LV1024Lisfab-  
ricatedusingISSI'shigh-performanceCMOStechnology.  
This highly reliable process coupled with innovative circuit  
design techniques, yields higher performance and low  
powerconsumptiondevices.  
• High-speed access times:  
8, 10, 12 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
options  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 250 µW (typical) with CMOS input levels.  
CE power-down  
• Fully static operation: no clock or refresh  
required  
TheIS63LV1024/IS63LV1024Loperatesfromasingle3.3V  
power supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
• Packages available:  
– 32-pin 300-mil SOJ  
– 32-pin 400-mil SOJ  
– 32-pin TSOP (Type II)  
– 32-pin STSOP (Type I)  
– 36-pin BGA (8mmx10mm)  
• Lead-free Available  
FUNCTIONAL BLOCK DIAGRAM  
128K X 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. I  
1/26/07  

IS63LV1024L-10JLI 替代型号

型号 品牌 替代类型 描述 数据表
IS63LV1024-10J ISSI

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128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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