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IS62C1024-35QI

更新时间： 2024-09-17 22:13:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
8页	70K
描述
128K x 8 HIGH-SPEED CMOS STATIC RAM

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IS62C1024-35QI 数据手册

IS62C1024

ISSI

128K x 8 HIGH-SPEED CMOS STATIC RAM

JANUARY 2000

FEATURES

DESCRIPTION

The ISSI IS62C1024 is a low power,131,072-word by

8-bit CMOS static RAM. It is fabricated using ISSI's

high-performance CMOS technology. This highly reliable

process coupled with innovative circuit design techniques,

yields higher performance and low power consumption

devices.

• High-speed access time: 35, 45, 55, 70 ns

• Low active power: 450 mW (typical)

• Low standby power: 500 µW (typical) CMOS

standby

• Output Enable (OE) and two Chip Enable

(CE1 and CE2) inputs for ease in applications

When CE1 is HIGH or CE2 is LOW (deselected), the

device assumes a standby mode at which the power

dissipation can be reduced by using CMOS input levels.

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V (±10%) power supply

Easy memory expansion is provided by using two Chip

Enable inputs, CE1 and CE2. The active LOW Write

Enable (WE) controls both writing and reading of the

memory.

The IS62C1024 is available in 32-pin 525-mil plastic SOP

and TSOP (type 1) packages.

FUNCTIONAL BLOCK DIAGRAM

512 X 2048

MEMORY ARRAY

A0-A16

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CE1

CE2

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

01/14/00

12 3 4 5 6 7 8

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