Datasheet > IS61VF25636A

IS61VF25636A

更新时间： 2024-11-20 04:44:47

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
32页	206K
描述
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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IS61VF25636A 数据手册

IS61LF25636A IS61VF25636A

IS61LF51218A IS61VF51218A

ISSI

256K x 36, 512K x 18

9 Mb SYNCHRONOUS FLOW-THROUGH

STATIC RAM

MAY 2005

DESCRIPTION

FEATURES

The ISSI IS61LF/VF25636A and IS61LF/VF51218A are

high-speed, low-powersynchronousstaticRAMs designed

to provide burstable, high-performance memory for commu-

nication and networking applications. The IS61LF/

VF25636A is organized as 262,144 words by 36 bits. The

IS61LF/VF51218A is organized as 524,288 words by 18

bits. Fabricated with ISSI's advanced CMOS technology,

the device integrates a 2-bit burst counter, high-speed

SRAM core, and high-drive capability outputs into a single

monolithic circuit. All synchronous inputs pass through

registers controlled by a positive-edge-triggered single

clock input.

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Burst sequence control using MODE input

•

Three chip enable option for simple depth expan-

sion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be one

to four bytes wide as controlled by the write control inputs.

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

• Power Supply

Separate byte enables allow individual bytes to be written.

Byte write operation is performed by using byte write

enable (BWE) input combined with one or more individual

byte write signals (BWx). In addition, Global Write (GW) is

available for writing all bytes at one time, regardless of the

byte write controls.

LF: V^DD3.3V + 5%, VDDQ 3.3V/2.5V + 5%

VF: V^DD2.5V + 5%, VDDQ 2.5V + 5%

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the ADV (burst address ad-

vance) input pin.

• JEDEC 100-Pin TQFP, 119-pin PBGA, and

165-pin PBGA packages

• Lead-free available

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

tKQ

Parameter

-6.5

6.5

-7.5

7.5

Units

Clock Access Time

Cycle Time

tKC

7.5

8.5

Frequency

133

117

MHz

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

05/04/05

12 3 4 5 6 7...32

中文翻译

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与IS61VF25636A相关器件

型号	品牌	获取价格	描述	数据表
IS61VF25636A-6.5B2	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-6.5B2I	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-6.5B3	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-6.5B3I	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-6.5TQ	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-6.5TQI	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-7.5B2	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-7.5B2I	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-7.5B3	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25636A-7.5B3I	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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