Datasheet > IS61VF409618B-7.5B3

IS61VF409618B-7.5B3

更新时间： 2024-11-24 12:03:15

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
34页	1684K
描述
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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IS61LF204836B, IS61VF/VVF204836B

IS61LF409618B, IS61VF/VVF409618B

2M x 36, 4M x 18

72 Mb SYNCHRONOUS FLOW-THROUGH

STATIC RAM

ADVANCED INFORMATION

OCTOBER 2012

DESCRIPTION

FEATURES

The 72Mb product family features high-speed, low-power

synchronous static RAMs designed to provide burstable,

high-performance memory for communication and network-

ing applications. The IS61LF/VF204836B is organized as

2,096,952 words by 36 bits. The IS61LF/VF409618B is

organized as 4,193,904 words by 18 bits. Fabricated with

ISSI's advanced CMOS technology, the device integrates

a 2-bit burst counter, high-speed SRAM core, and high-

drive capability outputs into a single monolithic circuit. All

synchronous inputs pass through registers controlled by

a positive-edge-triggered single clock input.

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Burst sequence control using MODE input

•

Three chip enable option for simple depth expan-

sion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

Writecyclesareinternallyself-timedandareinitiatedbythe

rising edge of the clock input. Write cycles can be one to

four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be writ-

ten. Byte write operation is performed by using byte write

enable (BWE) input combined with one or more individual

byte write signals (BWx). In addition, Global Write (GW)

is available for writing all bytes at one time, regardless of

the byte write controls.

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

• Power Supply

LF: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%)

VF: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%)

VVF: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%)

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be gener-

ated internally and controlled by the ADV (burst address

advance) input pin.

• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-

pin PBGA packages

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW. Inter-

leave burst is achieved when this pin is tied HIGH or left

ﬂoating.

• Lead-free available

FAST ACCESS TIME

Symbol

Parameter

-6.5

6.5

-7.5

7.5

8.5

117

Units

tkq

Clock Access Time

Cycle Time

tkc

7.5

Frequency

133

MHz

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00B

10/15/2012

12 3 4 5 6 7...34

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与IS61VF409618B-7.5B3相关器件

型号	品牌	获取价格	描述	数据表
IS61VF409618B-7.5B3L	ISSI	获取价格	2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-7.5M3	ISSI	获取价格	2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-7.5M3L	ISSI	获取价格	2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-7.5TQ	ISSI	获取价格	2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-7.5TQL	ISSI	获取价格	2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF51218A	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF51218A-6.5B2	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF51218A-6.5B2I	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF51218A-6.5B3	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF51218A-6.5B3I	ISSI	获取价格	256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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