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IS61VF25636A-7.5B3I PDF预览

IS61VF25636A-7.5B3I

更新时间： 2024-11-20 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器
页数 文件大小 规格书
32页 206K
描述
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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IS61VF25636A-7.5B3I 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：BGA
包装说明：TBGA, BGA165,11X15,40针数：165
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：7.5 ns其他特性：FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：117 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B165JESD-609代码：e0
长度：15 mm内存密度：9437184 bit
内存集成电路类型：CACHE SRAM内存宽度：36
功能数量：1端子数量：165
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TBGA封装等效代码：BGA165,11X15,40
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5 V认证状态：Not Qualified
座面最大高度：1.2 mm最大待机电流：0.05 A
最小待机电流：2.38 V子类别：SRAMs
最大压摆率：0.185 mA最大供电电压 (Vsup)：2.625 V
最小供电电压 (Vsup)：2.375 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：13 mmBase Number Matches：1

IS61VF25636A-7.5B3I 数据手册

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®
IS61LF25636A IS61VF25636A  
IS61LF51218A IS61VF51218A  
ISSI  
256K x 36, 512K x 18  
9 Mb SYNCHRONOUS FLOW-THROUGH  
STATIC RAM  
MAY 2005  
DESCRIPTION  
FEATURES  
The ISSI IS61LF/VF25636A and IS61LF/VF51218A are  
high-speed, low-powersynchronousstaticRAMs designed  
to provide burstable, high-performance memory for commu-  
nication and networking applications. The IS61LF/  
VF25636A is organized as 262,144 words by 36 bits. The  
IS61LF/VF51218A is organized as 524,288 words by 18  
bits. Fabricated with ISSI's advanced CMOS technology,  
the device integrates a 2-bit burst counter, high-speed  
SRAM core, and high-drive capability outputs into a single  
monolithic circuit. All synchronous inputs pass through  
registers controlled by a positive-edge-triggered single  
clock input.  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Burst sequence control using MODE input  
•
Three chip enable option for simple depth expan-  
sion and address pipelining  
• Common data inputs and data outputs  
• Auto Power-down during deselect  
• Single cycle deselect  
Write cycles are internally self-timed and are initiated by  
the rising edge of the clock input. Write cycles can be one  
to four bytes wide as controlled by the write control inputs.  
• Snooze MODE for reduced-power standby  
• JTAG Boundary Scan for PBGA package  
• Power Supply  
Separate byte enables allow individual bytes to be written.  
Byte write operation is performed by using byte write  
enable (BWE) input combined with one or more individual  
byte write signals (BWx). In addition, Global Write (GW) is  
available for writing all bytes at one time, regardless of the  
byte write controls.  
LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%  
VF: VDD 2.5V + 5%, VDDQ 2.5V + 5%  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller)  
input pins. Subsequent burst addresses can be generated  
internally and controlled by the ADV (burst address ad-  
vance) input pin.  
• JEDEC 100-Pin TQFP, 119-pin PBGA, and  
165-pin PBGA packages  
• Lead-free available  
The mode pin is used to select the burst sequence order,  
Linear burst is achieved when this pin is tied LOW.  
Interleave burst is achieved when this pin is tied HIGH or  
left floating.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
-6.5  
6.5  
-7.5  
7.5  
Units  
ns  
Clock Access Time  
Cycle Time  
tKC  
7.5  
8.5  
ns  
Frequency  
133  
117  
MHz  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. A  
1
05/04/05  
1234567...32

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IS61VF25636A-7.5TQ ISSI

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IS61VF25636A-7.5TQI ISSI

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IS61VF25672A ISSI

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IS61VF25672A-6.5B1 ISSI

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 		256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25672A-6.5B1I ISSI

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 		256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-6.5B2 ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-6.5B2L ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-6.5B3 ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-6.5B3L ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF409618B-6.5M3 ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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