Datasheet > IS61QDB44M18A-300M3L

IS61QDB44M18A-300M3L

更新时间： 2024-11-05 20:09:19

品牌	Logo	应用领域
美国芯成 - ISSI		时钟静态存储器内存集成电路
页数	文件大小	规格书
30页	591K
描述
QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

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IS61QDB44M18A-300M3L 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	BGA	包装说明：	LBGA, BGA165,11X15,40
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
Factory Lead Time：	10 weeks	风险等级：	5.16
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	300 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	长度：	17 mm
内存密度：	75497472 bit	内存集成电路类型：	QDR SRAM
内存宽度：	18	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	4MX18	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.7 mA
最大供电电压 (Vsup)：	1.89 V	最小供电电压 (Vsup)：	1.71 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	宽度：	15 mm
Base Number Matches：	1

IS61QDB44M18A-300M3L 数据手册

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IS61QDB44M18A

IS61QDB42M36A

4Mx18, 2Mx36

72Mb QUAD (Burst 4) SYNCHRONOUS SRAM

AUGUST 2014

FEATURES

DESCRIPTION

The 72Mb IS61QDB42M36A and IS61QDB44M18A are

synchronous, high-performance CMOS static random access

memory (SRAM) devices. These SRAMs have separate I/Os,

eliminating the need for high-speed bus turnaround. The

rising edge of K clock initiates the read/write operation, and

all internal operations are self-timed. Refer to the Timing

Reference Diagram for Truth Table for a description of the

basic operations of these QUAD (Burst of 4) SRAMs.



2Mx36 and 4Mx18 configuration available.

On-chip Delay-Locked Loop (DLL) for wide data

valid window.



Separate independent read and write ports with

concurrent read and write operations.



Synchronous pipeline read with late write operation.

Double Data Rate (DDR) interface for read and

write input ports.

Read and write addresses are registered on alternating rising

edges of the K clock. Reads and writes are performed in

double data rate. The following are registered internally on

the rising edge of the K clock:



1.5 cycle read latency.

Fixed 4-bit burst for read and write operations.

Clock stop support.



Read/write address

Two input clocks (K and K#) for address and control

registering at rising edges only.

Read enable



Two output clocks (C and C#) for data output control.

Write enable

Two echo clocks (CQ and CQ#) that are delivered

simultaneously with data.

Byte writes for burst addresses 1 and 3

Data-in for burst addresses 1 and 3



+1.8V core power supply and 1.5, 1.8V VDDQ, used

with 0.75, 0.9V VREF.

The following are registered on the rising edge of the K#

clock:



HSTL input and output interface.



Byte writes for burst addresses 2 and 4

Registered addresses, write and read controls, byte

writes, data in, and data outputs.



Data-in for burst addresses 2 and 4



Full data coherency.

Byte writes can change with the corresponding data-in to

enable or disable writes on a per-byte basis. An internal write

buffer enables the data-ins to be registered one cycle after

the write address. The first data-in burst is clocked one cycle

later than the write command signal, and the second burst is

timed to the following rising edge of the K# clock. Two full

clock cycles are required to complete a write operation.

Boundary scan using limited set of JTAG 1149.1

functions.



Byte write capability.

Fine ball grid array (FBGA) package:

13mmx15mm and 15mmx17mm body size

165-ball (11 x 15) array



Programmable impedance output drivers via 5x

user-supplied precision resistor.

During the burst read operation, the data-outs from the first

and third bursts are updated from output registers of the

second and third rising edges of the C# clock (starting 1.5

cycles later after read command). The data-outs from the

second and fourth bursts are updated with the third and

fourth rising edges of the C clock. The K and K# clocks are

used to time the data-outs whenever the C and C# clocks are

tied high. Two full clock cycles are required to complete a

read operation.

The device is operated with a single +1.8V power supply and

is compatible with HSTL I/O interfaces.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. B

08/21/2014

12 3 4 5 6 7...30

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IS61QDB44M18A-300M3L 替代型号

型号	品牌	替代类型	描述	数据表
CY7C1513KV18-300BZXC	CYPRESS	功能相似	72-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1513KV18-300BZC	CYPRESS	功能相似	72-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1513JV18-300BZC	CYPRESS	功能相似	72-Mbit QDR-II SRAM 4-Word Burst Architecture

与IS61QDB44M18A-300M3L相关器件

型号	品牌	获取价格	描述	数据表
IS61QDB451236A	ISSI	获取价格	512Kx36 and 1Mx18 configuration available
IS61QDB451236A-250M3L	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
IS61QDP2B21M18A	ISSI	获取价格	512Kx36 and 1Mx18 configuration available
IS61QDP2B21M18A1	ISSI	获取价格	512Kx36 and 1Mx18 configuration available
IS61QDP2B21M18A2	ISSI	获取价格	512Kx36 and 1Mx18 configuration available
IS61QDP2B21M36A	ISSI	获取价格	1Mx36 and 2Mx18 configuration available
IS61QDP2B21M36A1	ISSI	获取价格	1Mx36 and 2Mx18 configuration available
IS61QDP2B21M36A2	ISSI	获取价格	1Mx36 and 2Mx18 configuration available
IS61QDP2B22M18A	ISSI	获取价格	1Mx36 and 2Mx18 configuration available
IS61QDP2B22M18A1	ISSI	获取价格	1Mx36 and 2Mx18 configuration available

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