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IS61NVP12836A PDF预览

IS61NVP12836A

更新时间: 2024-10-12 04:58:39
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
29页 200K
描述
128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM

IS61NVP12836A 数据手册

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IS61NLP12832A  
IS61NLP12836A/IS61NVP12836A  
IS61NLP25618A/IS61NVP25618A  
128K x 32, 128K x 36, and 256K x 18  
4Mb, PIPELINE 'NO WAIT' STATE BUS SRAM  
®
ISSI  
PRELIMINARYINFORMATION  
SEPTEMBER 2005  
FEATURES  
DESCRIPTION  
The 4 Meg 'NLP/NVP' product family feature high-speed,  
low-power synchronous static RAMs designed to provide  
a burstable, high-performance, 'no wait' state, device for  
networking and communications applications. They are  
organizedas128Kwordsby32bits,128Kwordsby36bits,  
and256K wordsby18bits,fabricatedwithISSI'sadvanced  
CMOS technology.  
• 100 percent bus utilization  
• No wait cycles between Read and Write  
• Internal self-timed write cycle  
• Individual Byte Write Control  
• Single R/W (Read/Write) control pin  
• Clock controlled, registered address,  
data and control  
Incorporating a 'no wait' state feature, wait cycles are  
eliminated when the bus switches from read to write, or  
write to read. This device integrates a 2-bit burst counter,  
high-speed SRAM core, and high-drive capability outputs  
into a single monolithic circuit.  
• Interleaved or linear burst sequence control using  
MODE input  
• Three chip enables for simple depth expansion  
and address pipelining  
Allsynchronousinputspassthroughregistersarecontrolled  
byapositive-edge-triggeredsingleclockinput.Operations  
may be suspended and all synchronous inputs ignored  
when Clock Enable, CKE is HIGH. In this state the internal  
device will hold their previous values.  
• Power Down mode  
• Common data inputs and data outputs  
CKE pin to enable clock and suspend operation  
All Read, Write and Deselect cycles are initiated by the  
ADV input. When the ADV is HIGH the internal burst  
counter is incremented. New external addresses can be  
loaded when ADV is LOW.  
• JEDEC 100-pin TQFP, 165-ball PBGA and 119-  
ball PBGA packages  
• Power supply:  
Write cycles are internally self-timed and are initiated by  
the rising edge of the clock inputs and when WE is LOW.  
Separate byte enables allow individual bytes to be written.  
NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)  
NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)  
• Industrial temperature available  
• Lead-free available  
A burst mode pin (MODE) defines the order of the burst  
sequence.WhentiedHIGH,theinterleavedburstsequence  
is selected. When tied LOW, the linear burst sequence is  
selected.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
-250  
2.6  
4
-200  
3.1  
5
Units  
ns  
Clock Access Time  
Cycle Time  
tKC  
ns  
Frequency  
250  
200  
MHz  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00C  
1
09/12/05  

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128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM
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128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM
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