是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | BGA | 包装说明: | BGA, |
针数: | 119 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.49 | 最长访问时间: | 7.5 ns |
其他特性: | FLOW-THROUGH ARCHITECTURE | JESD-30 代码: | R-PBGA-B119 |
JESD-609代码: | e0 | 长度: | 22 mm |
内存密度: | 18874368 bit | 内存集成电路类型: | ZBT SRAM |
内存宽度: | 36 | 功能数量: | 1 |
端子数量: | 119 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX36 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 2.41 mm |
最大供电电压 (Vsup): | 2.625 V | 最小供电电压 (Vsup): | 2.375 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 1.27 mm | 端子位置: | BOTTOM |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IS61NVF51236-7.5B2I | ISSI |
获取价格 |
ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119 | |
IS61NVF51236-7.5B3 | ISSI |
获取价格 |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM | |
IS61NVF51236-7.5B3I | ISSI |
获取价格 |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM | |
IS61NVF51236-7.5B3I-TR | ISSI |
获取价格 |
IC SRAM 18M PARALLEL 165TFBGA | |
IS61NVF51236-7.5B3-TR | ISSI |
获取价格 |
IC SRAM 18M PARALLEL 165TFBGA | |
IS61NVF51236-7.5TQ | ISSI |
获取价格 |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM | |
IS61NVF51236-7.5TQI | ISSI |
获取价格 |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM | |
IS61NVF51236-7.5TQI-TR | ISSI |
获取价格 |
IC SRAM 18M PARALLEL 100TQFP | |
IS61NVF51236B-6.5B2I | ISSI |
获取价格 |
ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA119, BGA-119 | |
IS61NVF51236B-6.5B2L | ISSI |
获取价格 |
ZBT SRAM, 512KX36, 6.5ns, CMOS, PBGA119, BGA-119 |