Datasheet > 存储 > SRAM> IS61LV632A-4PQ

IS61LV632A-4PQ

更新时间： 2024-02-20 02:49:53

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
16页	122K
描述
32K x 32 SYNCHRONOUS FAST STATIC RAM

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技术参数
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IS61LV632A-4PQ 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	TQFP-100	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.85
Is Samacsys：	N	最长访问时间：	4 ns
其他特性：	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION	I/O 类型：	COMMON
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e0
长度：	20 mm	内存密度：	1048576 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	32
功能数量：	1	端子数量：	100
字数：	32768 words	字数代码：	32000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	32KX32
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装等效代码：	QFP100,.63X.87
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	2.5/3.3,3.3 V	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大待机电流：	0.01 A
最小待机电流：	3.14 V	子类别：	SRAMs
最大压摆率：	0.18 mA	最大供电电压 (Vsup)：	3.465 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

IS61LV632A-4PQ 数据手册

IS61LV632A

32K x 32 SYNCHRONOUS FAST STATIC RAM

ISSI

APRIL 2001

FEATURES

• Fast access time:

DESCRIPTION

The ISSI IS61LV632A is a high-speed, low-power synchro-

nous static RAM designed to provide a burstable, high-

performance, secondary cache for the i486™, Pentium™,

680X0™, and PowerPC™ microprocessors. It is organized

as 32,768 words by 32 bits, fabricated with ISSI's advanced

CMOStechnology.Thedeviceintegratesa2-bitburstcounter,

high-speed SRAM core, and high-drive capability outputs into

asinglemonolithiccircuit.Allsynchronousinputspassthrough

registers controlled by a positive-edge-triggered single clock

input.

– 4 ns-125 MHz; 5 ns-100 MHz;

6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control

using MODE input

Write cycles are internally self-timed and are initiated by the

rising edge of the clock input. Write cycles can be from one to

four bytes wide as controlled by the write control inputs.

• Three chip enables for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• Power-down control by ZZ input

Separate byte enables allow individual bytes to be written.

BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3

controlsDQ17-DQ24,BW4controlsDQ25-DQ32,conditioned

byBWEbeingLOW.ALOWonGWinputwouldcauseallbytes

to be written.

• JEDEC 100-Pin TQFP and PQFP package

• 3.3V Vcc and 2.5V V^CCQfor 2.5V I/Os

• Two Clock enables and one Clock disable to

eliminate multiple bank bus contention.

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller) input

pins. Subsequent burst addresses can be generated inter-

nally by the IS61LV632A and controlled by the ADV (burst

address advance) input pin.

• Control pins mode upon power-up:

– MODE in interleave burst mode

– ZZ in normal operation mode

These control pins can be connected to GNDQ

or VCCQ to alter their power-up state

Asynchronoussignalsincludeoutputenable(OE),sleepmode

input(ZZ), clock(CLK)andburstmodeinput(MODE). AHIGH

input on the ZZ pin puts the SRAM in the power-down state.

When ZZ is pulled LOW (or no connect), the SRAM normally

operates after three cycles of the wake-up period. A LOW

input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ

(or no connect) on MODE pin selects INTERLEAVED Burst.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

12 3 4 5 6 7...16

中文翻译

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与IS61LV632A-4PQ相关器件

型号	品牌	获取价格	描述	数据表
IS61LV632A-4TQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-5.5PQ	ISSI	获取价格	Cache SRAM, 32KX32, 5.5ns, CMOS, PQFP100, PLASTIC, QFP-100
IS61LV632A-5.5PQI	ISSI	获取价格	Cache SRAM, 32KX32, 5.5ns, CMOS, PQFP100, PLASTIC, QFP-100
IS61LV632A-5.5TQ	ISSI	获取价格	Cache SRAM, 32KX32, 5.5ns, CMOS, PQFP100, TQFP-100
IS61LV632A-5PQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-5TQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-6PQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-6PQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-6TQ	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM
IS61LV632A-6TQI	ISSI	获取价格	32K x 32 SYNCHRONOUS FAST STATIC RAM

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