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IS61LV12816-8K PDF预览

IS61LV12816-8K

更新时间: 2024-02-04 19:58:07
品牌 Logo 应用领域
矽成 - ICSI /
页数 文件大小 规格书
11页 146K
描述
128K x 16 HIGH-SPEED CMOS STATIC RAM

IS61LV12816-8K 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP44,.47SQ,32
针数:44Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.83最长访问时间:8 ns
其他特性:TTL AND CMOS COMPATIBLE INTERFACE LEVELSI/O 类型:COMMON
JESD-30 代码:S-PQFP-G44JESD-609代码:e0
长度:10 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP44,.47SQ,32
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.02 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.16 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10 mmBase Number Matches:1

IS61LV12816-8K 数据手册

 浏览型号IS61LV12816-8K的Datasheet PDF文件第1页浏览型号IS61LV12816-8K的Datasheet PDF文件第2页浏览型号IS61LV12816-8K的Datasheet PDF文件第4页浏览型号IS61LV12816-8K的Datasheet PDF文件第5页浏览型号IS61LV12816-8K的Datasheet PDF文件第6页浏览型号IS61LV12816-8K的Datasheet PDF文件第7页 
IS61LV12816  
PIN DESCRIPTIONS  
OPERATING RANGE  
A0-A16  
I/O0-I/O15  
CE  
Address Inputs  
Range  
Ambient Temperature  
Vcc  
Commercial  
Industrial  
0°C to +70°C  
3.3V ± 10%  
3.3V ± 10%  
Data Inputs/Outputs  
Chip Enable Input  
Output Enable Input  
Write Enable Input  
Lower-byte Control (I/O0-I/O7)  
Upper-byte Control (I/O8-I/O15)  
No Connection  
–40°C to +85°C  
1
OE  
WE  
2
LB  
UB  
NC  
3
Vcc  
Power  
GND  
Ground  
4
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
–0.5 to 4.0  
Terminal Voltage with Respect to GND –0.5 to Vcc+0.5  
Unit  
V
5
VCC  
Power Supply Voltage Relative to GND  
VTERM  
TSTG  
TBIAS  
V
Storage Temperature  
–65 to +150  
°C  
Temperature Under Bias:  
Com.  
Ind.  
–65 to +85  
–45 to +90  
°C  
°C  
6
PT  
Power Dissipation  
2.0  
W
IOUT  
DC Output Current (LOW)  
+20  
mA  
7
Note:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
8
9
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
Test Conditions  
Min.  
2.4  
—
Max.  
Unit  
V
VOH  
VOL  
VIH  
VIL  
ILI  
Output HIGH Voltage  
VCC = Min., IOH = –4.0 mA  
VCC = Min., IOL = 8.0 mA  
—
0.4  
10  
11  
12  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage(1)  
Input Leakage  
V
2
VCC + 0.3  
0.8  
V
–0.3  
V
GND VIN VCC  
Com.  
Ind.  
–1  
–5  
1
5
µA  
µA  
ILO  
Output Leakage  
GND VOUT VCC,  
Outputs Disabled  
Com.  
Ind.  
–1  
–5  
1
5
µA  
µA  
Notes:  
1. VIL (min.) = –2.0V for pulse width less than 10 ns.  
2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.  
Integrated Circuit Solution, Inc.  
SR023_0C  
3

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