Datasheet > IS61LSCS51236-333B

IS61LSCS51236-333B

更新时间： 2024-11-21 19:55:19

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
33页	173K
描述
Standard SRAM, 512KX36, 1.6ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, BGA-209

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IS61LSCS51236-333B 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	14 X 22 MM, 1 MM PITCH, BGA-209	针数：	209
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.92
最长访问时间：	1.6 ns	其他特性：	PIPELINED ARCHITECTURE
JESD-30 代码：	R-PBGA-B209	JESD-609代码：	e0
长度：	22 mm	内存密度：	18874368 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	36
湿度敏感等级：	3	功能数量：	1
端子数量：	209	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	512KX36	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	2.2 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

IS61LSCS51236-333B 数据手册

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IS61LSCS25672

IS61LSCS51236

ISSI

ADVANCE INFORMATION

NOVEMBER 2002

ΣRAM 256K X 72, 512K X 36

18MB SYNCHRONOUS SRAM

FEATURES

• JEDEC SigmaRam pinout and package standard

• Single 1.8V power supply (V^DD): 1.7V (min)

to 1.9V (max)

• Dedicated output supply voltage (V^DDQ): 1.8V

or 1.5V typical

• LVCMOS-compatibleI/Ointerface

• Common data I/O pins (DQs)

• Single Data Rate (SDR) data transfers

• Late Write Pipelined (PL) read operations

• Burst and non-burst read and write operations,

selectable via dedicated control pin (ADV)

• Internally controlled Linear Burst address

sequencing during burst operations

Bottom View

• Burst length of 2, 3, or 4, with automatic address

wrap

209-Ball, 14 mm x 22 mm BGA

1 mm Ball Pitch, 11 x 19 Ball Array

• Full read/write coherency

• Byte write capability

SIGMARAM FAMILY OVERVIEW

The IS61LSCS series ΣRAMs are built in compliance with

the SigmaRAM pinout standard for synchronous SRAMs.

The implementations are 18,874,368-bit (18Mb) SRAMs.

These are the first in a family of wide, very low voltage CMOS

I/O SRAMs designed to operate at the speeds needed to

implement economical high performance networking

systems.

• Two cycle deselect

• Single-ended input clock (CLK)

• Data-referenced output clocks (CQ/, CQ)

• Selectable output driver impedance via dedicated

control pin (ZQ)

ISSI’s ΣRAMs are offered in a number of configurations that

emulate other synchronous SRAMs, such as Burst RAMs,

NBTRAMs, LateWrite, orDoubleDataRate(DDR)SRAMs.

The logical differences between the protocols employed by

these RAMs hinge mainly on various combinations of

address bursting, output data registering and write cueing.

• Echo clock outputs track data output drivers

• Depth expansion capability (2 or 4 banks) via

programmable chip enables (E2, E3, EP2, EP3)

• JTAG boundary scan (subset of IEEE standard

1149.1)

ΣRAMs allow a user to implement the interface protocol best

suited to the task at hand.

• 209 Ball (11x19), 1mm pitch, 14mm x 22mm Ball

Grid Array (BGA) package

This specific product is Common I/O, SDR, Pipelined, and

in the family is identified as 1x1Lp.

Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

ADVANCE INFORMATION Rev. 00B

11/11/02

12 3 4 5 6 7...33

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与IS61LSCS51236-333B相关器件

型号	品牌	获取价格	描述	数据表
IS61LSSD102418-250B	ISSI	获取价格	Standard SRAM, 1MX18, 2.1ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LSSD102418-300B	ISSI	获取价格	Standard SRAM, 1MX18, 1.8ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LSSD102418-333B	ISSI	获取价格	Standard SRAM, 1MX18, 1.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LSSS102418-300B	ISSI	获取价格	Standard SRAM, 1MX18, 1.8ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LSSS102418-333B	ISSI	获取价格	Standard SRAM, 1MX18, 1.6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LSSS51236-250B	ISSI	获取价格	Standard SRAM, 512KX36, 2.1ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LSSS51236-300B	ISSI	获取价格	Standard SRAM, 512KX36, 1.8ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, BGA-165
IS61LV10008-12M	ISSI	获取价格	Standard SRAM, 1MX8, 12ns, CMOS, PBGA48, 9 X 11 MM, MINI, BGA-48
IS61LV10008-8MI	ISSI	获取价格	Standard SRAM, 1MX8, 8ns, CMOS, PBGA48, 9 X 11 MM, MINI, BGA-48
IS61LV10248	ISSI	获取价格	1M x 8 HIGH-SPEED CMOS STATIC RAM

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