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IS61LPS51236A PDF预览

IS61LPS51236A

更新时间: 2024-11-18 04:58:35
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
34页 220K
描述
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM

IS61LPS51236A 数据手册

 浏览型号IS61LPS51236A的Datasheet PDF文件第2页浏览型号IS61LPS51236A的Datasheet PDF文件第3页浏览型号IS61LPS51236A的Datasheet PDF文件第4页浏览型号IS61LPS51236A的Datasheet PDF文件第5页浏览型号IS61LPS51236A的Datasheet PDF文件第6页浏览型号IS61LPS51236A的Datasheet PDF文件第7页 
IS61VPS25672A IS61LPS25672A  
IS61VPS51236A IS61LPS51236A  
IS61VPS102418A IS61LPS102418A  
®
ISSI  
256K x 72, 512K x 36, 1024K x 18  
18Mb SYNCHRONOUS PIPELINED,  
SINGLE CYCLE DESELECT STATIC RAM  
FEBRUARY 2005  
DESCRIPTION  
FEATURES  
The ISSIIS61LPS/VPS51236A,IS61LPS/VPS102418A,  
andIS61LPS/VPS25672Aarehigh-speed,low-powersyn-  
chronous staticRAMs designedtoprovideburstable, high-  
performance memory for communication and networking  
applications. The IS61LPS/VPS51236A is organized as  
524,288 words by 36 bits, the IS61LPS/VPS102418A is  
organizedas1,048,576wordsby18bits,andtheIS61LPS/  
VPS25672A is organized as 262,144 words by 72 bits.  
Fabricated with ISSI's advanced CMOS technology, the  
deviceintegratesa2-bitburstcounter,high-speedSRAM  
core,andhigh-drivecapabilityoutputsintoasinglemono-  
lithic circuit. All synchronous inputs pass through regis-  
ters controlled by a positive-edge-triggered single clock  
input.  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Burst sequence control using MODE input  
• Three chip enable option for simple depth  
expansion and address pipelining  
• Common data inputs and data outputs  
• Auto Power-down during deselect  
• Single cycle deselect  
Write cycles are internally self-timed and are initiated by  
therisingedgeoftheclockinput. Writecyclescanbeone  
tofourbyteswideascontrolledbythewritecontrolinputs.  
• Snooze MODE for reduced-power standby  
• JTAG Boundary Scan for PBGA package  
• Power Supply  
Separatebyteenablesallowindividualbytestobewritten.  
The byte write operation is performed by using the byte  
write enable (BWE) input combined with one or more  
individual byte write signals (BWx). In addition, Global  
Write (GW) is available for writing all bytes at one time,  
regardless of the byte write controls.  
LPS: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%  
VPS: VDD 2.5V + 5%, VDDQ 2.5V + 5%  
• JEDEC 100-Pin TQFP, 119-ball PBGA, 165-ball  
PBGA, and 209-ball (x72) packages  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller)  
inputpins.Subsequentburstaddressescanbegenerated  
internally and controlled by the ADV (burst address  
advance) input pin.  
• Lead-free available  
The mode pin is used to select the burst sequence order,  
Linear burst is achieved when this pin is tied LOW.  
Interleave burst is achieved when this pin is tied HIGH or  
left floating.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
250  
2.6  
4
200  
3.1  
5
Units  
ns  
Clock Access Time  
Cycle Time  
tKC  
ns  
Frequency  
250  
200  
MHz  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. D  
1
02/11/05  

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