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IS46R86400D-6BLA1 PDF预览

IS46R86400D-6BLA1

更新时间： 2024-11-19 19:18:35
品牌 Logo 应用领域
美国芯成 - ISSI 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
33页 978K
描述
DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-60

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IS46R86400D-6BLA1 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended零件包装代码：BGA
包装说明：TBGA, BGA60,9X12,40/32针数：60
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.28Factory Lead Time：10 weeks
风险等级：5.42访问模式：FOUR BANK PAGE BURST
最长访问时间：0.7 ns其他特性：AUTO/SELF REFRESH
最大时钟频率 (fCLK)：166 MHzI/O 类型：COMMON
交错的突发长度：2,4,8JESD-30 代码：R-PBGA-B60
JESD-609代码：e1长度：13 mm
内存密度：536870912 bit内存集成电路类型：DDR DRAM
内存宽度：8功能数量：1
端口数量：1端子数量：60
字数：67108864 words字数代码：64000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：64MX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TBGA封装等效代码：BGA60,9X12,40/32
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE
峰值回流温度（摄氏度）：260电源：2.5 V
认证状态：Not Qualified刷新周期：8192
筛选级别：AEC-Q100座面最大高度：1.2 mm
自我刷新：YES连续突发长度：2,4,8
最大待机电流：0.025 A子类别：DRAMs
最大压摆率：0.37 mA最大供电电压 (Vsup)：2.7 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
宽度：8 mmBase Number Matches：1

IS46R86400D-6BLA1 数据手册

 浏览型号IS46R86400D-6BLA1的Datasheet PDF文件第2页浏览型号IS46R86400D-6BLA1的Datasheet PDF文件第3页浏览型号IS46R86400D-6BLA1的Datasheet PDF文件第4页浏览型号IS46R86400D-6BLA1的Datasheet PDF文件第5页浏览型号IS46R86400D-6BLA1的Datasheet PDF文件第6页浏览型号IS46R86400D-6BLA1的Datasheet PDF文件第7页 
IS43/46R86400D  
IS43/46R16320D, IS43/46R32160D  
16Mx32, 32Mx16, 64Mx8  
512Mb DDR SDRAM  
MAY 2015  
FEATURES  
DEVICE OVERVIEW  
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.5Vꢀ±ꢀ0.2Vꢀ(-6)  
•ꢀ VDDꢀandꢀVDDQ:ꢀ2.6Vꢀ±ꢀ0.1Vꢀ(-5)  
•ꢀ SSTL_2ꢀcompatibleꢀI/O  
ISSI’sꢀ512-MbitꢀDDRꢀSDRAMꢀachievesꢀhighꢀspeedꢀdataꢀ  
transfer using pipeline architecture and two data word  
accessesꢀperꢀclockꢀcycle.ꢀTheꢀ536,870,912-bitꢀmemoryꢀ  
arrayꢀisꢀinternallyꢀorganizedꢀasꢀfourꢀbanksꢀofꢀ128Mbꢀtoꢀ  
allowꢀconcurrentꢀoperations.ꢀTheꢀpipelineꢀallowsꢀReadꢀ  
and Write burst accesses to be virtually continuous, with  
theꢀoptionꢀtoꢀconcatenateꢀorꢀtruncateꢀtheꢀbursts.ꢀTheꢀ  
programmable features of burst length, burst sequence  
andꢀCASꢀlatencyꢀenableꢀfurtherꢀadvantages.ꢀTheꢀdeviceꢀ  
isꢀavailableꢀinꢀ8-bit,ꢀ16-bitꢀandꢀ32-bitꢀdataꢀwordꢀsizeꢀ  
InputꢀdataꢀisꢀregisteredꢀonꢀtheꢀI/Oꢀpinsꢀonꢀbothꢀedgesꢀ  
ofꢀDataꢀStrobeꢀsignal(s),ꢀwhileꢀoutputꢀdataꢀisꢀreferencedꢀ  
toꢀbothꢀedgesꢀofꢀDataꢀStrobeꢀandꢀbothꢀedgesꢀofꢀCLK.ꢀ  
CommandsꢀareꢀregisteredꢀonꢀtheꢀpositiveꢀedgesꢀofꢀCLK.ꢀ  
•ꢀ Double-dataꢀrateꢀarchitecture;ꢀtwoꢀdataꢀtransfersꢀ  
per clock cycle  
•ꢀ Bidirectional,ꢀdataꢀstrobeꢀ(DQS)ꢀisꢀtransmitted/  
received with data, to be used in capturing data  
at the receiver  
•ꢀ DQSꢀisꢀedge-alignedꢀwithꢀdataꢀforꢀREADsꢀandꢀ  
centre-alignedꢀwithꢀdataꢀforꢀWRITEs  
•ꢀ Differentialꢀclockꢀinputsꢀ(CKꢀandꢀCK)  
•ꢀ DLLꢀalignsꢀDQꢀandꢀDQSꢀtransitionsꢀwithꢀCKꢀ  
transitions  
•ꢀ CommandsꢀenteredꢀonꢀeachꢀpositiveꢀCKꢀedge;ꢀ  
data and data mask referenced to both edges of  
DQS  
AnꢀAutoꢀRefreshꢀmodeꢀisꢀprovided,ꢀalongꢀwithꢀaꢀSelfꢀ  
Refreshꢀmode.ꢀAllꢀI/OsꢀareꢀSSTL_2ꢀcompatible.  
ADDRESS TABLE  
•ꢀ Fourꢀinternalꢀbanksꢀforꢀconcurrentꢀoperation  
Parameter  
16M x 32  
32M x 16  
64M x 8  
•ꢀ DataꢀMaskꢀforꢀwriteꢀdata.ꢀDMꢀmasksꢀwriteꢀdataꢀ  
at both rising and falling edges of data strobe  
Configuration 4Mꢀxꢀ32ꢀxꢀ4ꢀ  
8Mꢀxꢀ16ꢀxꢀ4ꢀ  
16Mꢀxꢀ8ꢀxꢀ4ꢀ  
banks  
banks  
banks  
•ꢀ BurstꢀLength:ꢀ2,ꢀ4ꢀandꢀ8  
BankꢀAddressꢀ BA0,ꢀBA1  
Pins  
BA0,ꢀBA1  
BA0,ꢀBA1  
•ꢀ BurstꢀType:ꢀSequentialꢀandꢀInterleaveꢀmode  
•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ2.5ꢀandꢀ3ꢀ  
•ꢀ AutoꢀRefreshꢀandꢀSelfꢀRefreshꢀModes  
•ꢀ AutoꢀPrecharge  
Autoprecharge A8/AP  
Pins  
A10/AP  
A10/AP  
RowꢀAddress 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)  
•ꢀ TRASꢀLockoutꢀSupportedꢀ(tRAP = tRCD  
)
Column  
Address  
512(A0ꢀ–ꢀA7,ꢀ 1K(A0ꢀ–ꢀA9)  
A9)  
2K(A0ꢀ–ꢀA9,ꢀ  
A11)  
OPTIONS  
RefreshꢀCount  
Com./Ind./A1 8Kꢀ/ꢀ64ms  
A2 8Kꢀ/ꢀ16ms  
•ꢀ Configuration(s):ꢀ16Mx32,ꢀ32Mx16,ꢀandꢀ64Mx8  
8Kꢀ/ꢀ64ms  
8Kꢀ/ꢀ16ms  
8Kꢀ/ꢀ64ms  
8Kꢀ/ꢀ16ms  
•ꢀ Package(s):ꢀ144ꢀBallꢀBGAꢀ(x32),ꢀ66-pinꢀTSOP-IIꢀ  
(x8,ꢀx16),ꢀandꢀ60ꢀBallꢀBGAꢀ(x8,ꢀx16)  
•ꢀ Lead-freeꢀpackage  
•ꢀꢀ TemperatureꢀRange:ꢀ  
ꢀ Commercialꢀ(0°Cꢀtoꢀ+70°C)  
ꢀ Industrialꢀ(-40°Cꢀtoꢀ+85°C)  
Automotive,ꢀA1ꢀ(-40°Cꢀtoꢀ+85°C)  
Automotive,ꢀA2ꢀ(-40°Cꢀtoꢀ+105°C)  
KEY TIMING PARAMETERS  
Speed Grade  
-5  
200ꢀ 167ꢀ  
ckꢀMaxꢀCLꢀ=ꢀ2.5ꢀ 167ꢀ 167ꢀ  
ckꢀMaxꢀCLꢀ=ꢀ2ꢀ 133ꢀ 133ꢀ  
-6  
Units  
F
F
F
ckꢀMaxꢀCLꢀ=ꢀ3ꢀ  
ꢀ
ꢀ
ꢀ
MHz  
MHz  
MHz  
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-  
est version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-  
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications  
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc.  
1
Rev. D  
05/18/2015  
1234567...33

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与IS46R86400D-6BLA1相关器件

型号 品牌 获取价格 描述 数据表
IS46R86400D-6BLA1-TR ISSI

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 		Cache DRAM Module, 64MX8, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, L
IS46R86400D-6TLA1 ISSI

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 		DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
IS46R86400D-6TLA1-TR ISSI

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 		Cache DRAM Module, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
IS46TR16128A-125KBLA1 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128A-125KBLA2 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128A-15HBLA1 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128A-15HBLA2 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128A-187FBLA1 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128A-187FBLA2 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128AL-125KBLA1 ISSI

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 		256Mx8, 128Mx16 2Gb DDR3 SDRAM

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