Datasheet > IS46TR16128AL-187FBLA2

IS46TR16128AL-187FBLA2

更新时间： 2024-10-28 15:35:31

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
82页	3551K
描述
DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, LEAD FREE, FBGA-96

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS46TR16128AL-187FBLA2 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	TFBGA,	针数：	96
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.36	风险等级：	5.63
访问模式：	MULTI BANK PAGE BURST	最长访问时间：	0.3 ns
其他特性：	AUTO/SELF REFRESH	JESD-30 代码：	R-PBGA-B96
长度：	13 mm	内存密度：	2147483648 bit
内存集成电路类型：	DDR DRAM	内存宽度：	16
功能数量：	1	端口数量：	1
端子数量：	96	字数：	134217728 words
字数代码：	128000000	工作模式：	SYNCHRONOUS
组织：	128MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	座面最大高度：	1.2 mm
自我刷新：	YES	最大供电电压 (Vsup)：	1.45 V
最小供电电压 (Vsup)：	1.283 V	标称供电电压 (Vsup)：	1.35 V
表面贴装：	YES	技术：	CMOS
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	宽度：	9 mm
Base Number Matches：	1

IS46TR16128AL-187FBLA2 数据手册

浏览型号IS46TR16128AL-187FBLA2的Datasheet PDF文件第2页

浏览型号IS46TR16128AL-187FBLA2的Datasheet PDF文件第3页

浏览型号IS46TR16128AL-187FBLA2的Datasheet PDF文件第4页

浏览型号IS46TR16128AL-187FBLA2的Datasheet PDF文件第5页

浏览型号IS46TR16128AL-187FBLA2的Datasheet PDF文件第6页

浏览型号IS46TR16128AL-187FBLA2的Datasheet PDF文件第7页

IS43/46TR16128A, IS43/46TR16128AL,

IS43/46TR82560A, IS43/46TR82560AL

256Mx8, 128Mx16 2Gb DDR3 SDRAM

ADVANCED INFORMATION

NOVEMBER 2012

FEATURES



Standard Voltage: V_DDand V_DDQ= 1.5V ± 0.075V

Low Voltage (L): V_DDand V_DDQ= 1.35V + 0.1V, -0.067V



Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C



High speed data transfer rates with system

frequency up to 933 MHz



Partial Array Self Refresh



8 internal banks for concurrent operation

8n-Bit pre-fetch architecture

Asynchronous RESET pin

TDQS (Termination Data Strobe) supported (x8

only)

Programmable CAS Latency

Programmable Additive Latency: 0, CL-1,CL-2



OCD (Off-Chip Driver Impedance Adjustment)

Dynamic ODT (On-Die Termination)

Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

Write Leveling

Programmable CAS WRITE latency (CWL) based

on tCK



Programmable Burst Length: 4 and 8

Programmable Burst Sequence: Sequential or

Interleave

Operating temperature:

Commercial (T_C= 0°C to +95°C)

Industrial (T_C= -40°C to +95°C)

Automotive, A1 (T_C= -40°C to +95°C)

Automotive, A2 (T_C= -40°C to +105°C)



BL switch on the fly

Auto Self Refresh(ASR)

Self Refresh Temperature(SRT)

ADDRESS TABLE

Parameter

OPTIONS

256Mx8

A0-A14

A0-A9

BA0-2

1KB

128Mx16

A0-A13

A0-A9

BA0-2

2KB



Configuration:

Row Addressing

Column Addressing

Bank Addressing

256Mx8

128Mx16



Package:

Page size

Auto Precharge

Addressing

96-ball FBGA (9mm x 13mm) for x16

78-ball FBGA (8mm x 10.5mm) for x8

A10/AP

BL switch on the fly

A12/BC#

SPEED BIN

Speed Option

187F

15H

125K

107M

Units

JEDEC Speed Grade

DDR3-1066F

DDR3-1333H

DDR3-1600K

DDR3-1866M

CL-nRCD-nRP

tRCD,tRP(min)

Note:

7-7-7

13.125

9-9-9

13.125

11-11-11

13.125

13-13-13

13.91

tCK

Faster speed options are backward compatible to slower speed options.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised

to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product

can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use

in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. 00A

11/14/2012

12 3 4 5 6 7...82

中文翻译

下载PDF

与IS46TR16128AL-187FBLA2相关器件

型号	品牌	获取价格	描述	数据表
IS46TR16128B	ISSI	获取价格	Programmable CAS Latency
IS46TR16128B-125KBLA1	ISSI	获取价格	DDR DRAM, 128MX16, CMOS, PBGA96, BGA-96
IS46TR16128B-125KBLA1-TR	ISSI	获取价格	IC DRAM 2G PARALLEL 96TWBGA
IS46TR16128B-125KBLA2	ISSI	获取价格	DDR DRAM, 128MX16, CMOS, PBGA96, BGA-96
IS46TR16128B-125KBLA2-TR	ISSI	获取价格	IC SDRAM 2GBIT 800MHZ 96BGA
IS46TR16128B-15HBLA1	ISSI	获取价格	DDR DRAM, 128MX16, CMOS, PBGA96, BGA-96
IS46TR16128B-15HBLA1-TR	ISSI	获取价格	IC DRAM 2G PARALLEL 96TWBGA
IS46TR16128B-15HBLA2	ISSI	获取价格	IC DRAM 2G PARALLEL 96TWBGA
IS46TR16128B-15HBLA2-TR	ISSI	获取价格	IC DRAM 2G PARALLEL 96TWBGA
IS46TR16128BL	ISSI	获取价格	Programmable CAS Latency

与IS46TR16128AL-187FBLA2相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

12
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

11
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

38
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IS46TR16128AL-187FBLA2

IS46TR16128AL-187FBLA2 技术参数

IS46TR16128AL-187FBLA2 数据手册

与IS46TR16128AL-187FBLA2相关器件

与IS46TR16128AL-187FBLA2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS46TR16128AL-187FBLA2

IS46TR16128AL-187FBLA2 技术参数

IS46TR16128AL-187FBLA2 数据手册

与IS46TR16128AL-187FBLA2相关器件

与IS46TR16128AL-187FBLA2相关文章

您还可以找

您在本页遇到什么问题？