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IS43R16160A-5T PDF预览

IS43R16160A-5T

更新时间： 2024-11-17 04:23:03
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
页数 文件大小 规格书
56页 770K
描述
16Meg x 16 256-MBIT DDR SDRAM

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中文翻译

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IS43R16160A-5T 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP2
包装说明：TSSOP, TSSOP66,.46针数：66
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.24风险等级：5.73
访问模式：FOUR BANK PAGE BURST最长访问时间：0.65 ns
其他特性：AUTO/SELF REFRESH最大时钟频率 (fCLK)：200 MHz
I/O 类型：COMMON交错的突发长度：2,4,8
JESD-30 代码：R-PDSO-G66JESD-609代码：e0
长度：22.22 mm内存密度：268435456 bit
内存集成电路类型：DDR DRAM内存宽度：16
湿度敏感等级：3功能数量：1
端口数量：1端子数量：66
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：16MX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP66,.46
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：NOT SPECIFIED电源：2.5 V
认证状态：Not Qualified刷新周期：8192
座面最大高度：1.2 mm自我刷新：YES
连续突发长度：2,4,8最大待机电流：0.03 A
子类别：DRAMs最大压摆率：0.4 mA
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：2.6 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：10.16 mm
Base Number Matches：1

IS43R16160A-5T 数据手册

 浏览型号IS43R16160A-5T的Datasheet PDF文件第2页浏览型号IS43R16160A-5T的Datasheet PDF文件第3页浏览型号IS43R16160A-5T的Datasheet PDF文件第4页浏览型号IS43R16160A-5T的Datasheet PDF文件第5页浏览型号IS43R16160A-5T的Datasheet PDF文件第6页浏览型号IS43R16160A-5T的Datasheet PDF文件第7页 
®
IS43R16160A  
ISSI  
PRELIMINARY INFORMATION  
NOVEMBER 2005  
16Meg x 16  
256-MBIT DDR SDRAM  
FEATURES  
DEVICE OVERVIEW  
• Clock Frequency: 200, 166 MHz  
ISSI’s 256-Mbit DDR SDRAM achieves high-speed data  
transfer using pipeline architecture and two data word  
accesses per clock cycle. The 268,435,456-bit memory  
array is internally organized as four banks of 64M-bit to  
allowconcurrentoperations. ThepipelineallowsRead  
and Write burst accesses to be virtually continuous, with  
the option to concatenate or truncate the bursts. The  
programmable features of burst length, burst sequence  
and CAS latency enable further advantages. The device  
is available in 16-bit data word size. Input data is regis-  
tered on the I/O pins on both edges of Data Strobe  
signal(s), while output data is referenced to both edges of  
Data Strobe and both edges of CK. Commands are  
registered on the positive edges of CK. Auto Refresh,  
Active Power Down, and Pre-charge Power Down modes  
are enabled by using clock enable (CKE) and other  
inputs in an industry-standard sequence. All input and  
output voltage levels are compatible with SSTL 2.  
• Power supply (VDD and VDDQ)  
DDR 333: 2.5V + 0.2V  
DDR 400: 2.6V + 0.1V  
• SSTL 2 interface  
• Four internal banks to hide row Pre-charge  
and Active operations  
• Commands and addresses register on positive  
clock edges (CK)  
• Bi-directional Data Strobe signal for data cap-  
ture  
• Differential clock inputs (CK and CK) for  
two data accesses per clock cycle  
• Data Mask feature for Writes supported  
• DLL aligns data I/O and Data Strobe transitions  
with clock inputs  
• Half-strength and Full-strength drive strength  
options  
KEY TIMING PARAMETERS  
Parameter  
-5  
-6  
Unit  
• Programmable burst length for Read and Write  
operations  
DDR400  
DDR333  
Clock Cycle Time  
CAS Latency = 3  
CAS Latency = 2.5  
CAS Latency = 2  
• Programmable CAS Latency (2, 2.5, or 3  
clocks)  
5
6
7.5  
6
6
7.5  
ns  
ns  
ns  
• Programmable burst sequence: sequential or  
interleaved  
Clock Frequency  
CAS Latency = 3  
CAS Latency = 2.5  
CAS Latency = 2  
• Burst concatenation and truncation supported  
for maximum data throughput  
• Auto Pre-charge option for each Read or Write  
burst  
200  
166  
133  
166  
166  
133  
MHz  
MHz  
MHz  
• 8192 refresh cycles every 64ms  
• Auto Refresh and Self Refresh Modes  
• Pre-charge Power Down and Active Power  
Down Modes  
• Lead-free available  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. 00B  
11/28/05  
1234567...56

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与IS43R16160A-5T相关器件

型号 品牌 获取价格 描述 数据表
IS43R16160A-5TL ISSI

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 		16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-6T ISSI

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 		16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-6TL ISSI

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 		DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH X 0.875 INCH, 0.65 MM PITCH, LEAD FREE,
IS43R16160A-75T ISSI

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 		DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
IS43R16160B ISSI

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 		32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI ISSI

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 		32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL ISSI

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 		32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BLI ISSI

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 		32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5T ISSI

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 		DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
IS43R16160B-5TI ISSI

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 		32Mx8, 16Mx16 256Mb DDR Synchronous DRAM

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