Datasheet > IS43R16160B

IS43R16160B

更新时间： 2024-11-18 12:03:59

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率
页数	文件大小	规格书
41页	932K
描述
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM

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数据手册

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IS43R16160B 数据手册

IS43R83200B, IS46R83200B

IS43R16160B, IS46R16160B

32Mx8, 16Mx16

256Mb DDR Synchronous DRAM

AUGUST 2010

FEATURES:

•ꢀ Vd d =Vd d q = 2.5V+0.2V (-5, -6, -75)

•ꢀ Double data rate architecture; two data transfers

per clock cycle.

•ꢀ Bidirectional , data strobe (DQS) is transmitted/

received with data

•ꢀ Differential clock input (CLK and /CLK)

DESCRIPTION:

IS43/46R83200B is a 4-bank x 8,388,608-word x8bit,

IS43/46R16160B is a 4-bank x 4,194,304-word x 16bit

double data rate synchronous DRAM , with SSTL_2

interface. All control and address signals are referenced

to the rising edge of CLK. Input data is registered on

both edges of data strobe, and output data and data

strobe are referenced on both edges of CLK. The device

achieves very high speed clock rate up to 200 MHz.

•ꢀ DLL aligns DQ and DQS transitions with CLK

transitions edges of DQS

•ꢀ Commands entered on each positive CLK edge;

•ꢀ Data and data mask referenced to both edges of

KEY TIMING PARAMETERS

Parameter

-5

-6

-75 Unit

DQS

Clk Cycle Time

•ꢀ 4 bank operation controlled by BA0 , BA1

CAS Latency = 3

CAS Latency = 2.5

CAS Latency = 2

7.5

(Bank Address)

•ꢀ /CAS latency -2.0 / 2.5 / 3.0 (programmable) ;

Burst length -2 / 4 / 8 (programmable)

Burst type -Sequential / Interleave (program-

mable)

Clk Frequency

CAS Latency = 3

CAS Latency = 2.5

CAS Latency = 2

200

133

167

133

133 MHz

•ꢀ Auto precharge/ All bank precharge controlled

by A10

Access Time from Clock

CAS Latency = 3

•ꢀ 8192 refresh cycles / 64ms (4 banks concurrent

+0.70 +0.70 +0.75 ns

refresh)

CAS Latency = 2.5 +0.70 +0.70 +0.75 ns

CAS Latency = 2

•ꢀ Auto refresh and Self refresh

+0.75 +0.75 +0.75 ns

•ꢀ Row address A0-12 / Column address A0-9(x8)/

A0-8(x16)

•ꢀ SSTL_2 Interface

•ꢀ Package:

ADDRESS TABLE

Parameter

32M x 8

16M x 16

66-pin TSOP II (x8 and x16)

60-ball TF-BGA (x16 only)

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

Bank Address Pins

BA0, BA1

•ꢀ Temperature Range:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive (-40^oC to +85^oC)

Autoprecharge Pins

Row Addresses

Column Addresses

Refresh Count

A10/AP

A0 – A12

A0 – A9

A10/AP

A0 – A12

A0 – A8

8192 / 64ms 8192 / 64ms

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. E

08/13/2010

12 3 4 5 6 7...41

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与IS43R16160B相关器件

型号	品牌	获取价格	描述	数据表
IS43R16160B-5BI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BL	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BLI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5T	ISSI	获取价格	DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
IS43R16160B-5TI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5TL	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5TLI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5TLI-TR	ISSI	获取价格	暂无描述
IS43R16160B-5TL-TR	ISSI	获取价格	DRAM
IS43R16160B-6BI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM

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