Datasheet > 存储 > DRAM> IS43R16160B-5TL

IS43R16160B-5TL

更新时间： 2024-11-20 12:03:59

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器双倍数据速率
页数	文件大小	规格书
41页	932K
描述
32Mx8, 16Mx16 256Mb DDR Synchronous DRAM

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技术参数
数据手册
替代型号

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IS43R16160B-5TL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TSOP2	包装说明：	TSOP2, TSSOP66,.46
针数：	66	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.24
Factory Lead Time：	14 weeks	风险等级：	5.79
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	0.7 ns
其他特性：	AUTO/SELF REFRESH	最大时钟频率 (fCLK)：	200 MHz
I/O 类型：	COMMON	交错的突发长度：	2,4,8
JESD-30 代码：	R-PDSO-G66	JESD-609代码：	e3
长度：	22.22 mm	内存密度：	268435456 bit
内存集成电路类型：	DDR DRAM	内存宽度：	16
湿度敏感等级：	3	功能数量：	1
端口数量：	1	端子数量：	66
字数：	16777216 words	字数代码：	16000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	16MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP2	封装等效代码：	TSSOP66,.46
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）：	260	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
座面最大高度：	1.2 mm	自我刷新：	YES
连续突发长度：	2,4,8	最大待机电流：	0.03 A
子类别：	DRAMs	最大压摆率：	0.29 mA
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	10.16 mm

IS43R16160B-5TL 数据手册

IS43R83200B, IS46R83200B

IS43R16160B, IS46R16160B

32Mx8, 16Mx16

256Mb DDR Synchronous DRAM

AUGUST 2010

FEATURES:

•ꢀ Vd d =Vd d q = 2.5V+0.2V (-5, -6, -75)

•ꢀ Double data rate architecture; two data transfers

per clock cycle.

•ꢀ Bidirectional , data strobe (DQS) is transmitted/

received with data

•ꢀ Differential clock input (CLK and /CLK)

DESCRIPTION:

IS43/46R83200B is a 4-bank x 8,388,608-word x8bit,

IS43/46R16160B is a 4-bank x 4,194,304-word x 16bit

double data rate synchronous DRAM , with SSTL_2

interface. All control and address signals are referenced

to the rising edge of CLK. Input data is registered on

both edges of data strobe, and output data and data

strobe are referenced on both edges of CLK. The device

achieves very high speed clock rate up to 200 MHz.

•ꢀ DLL aligns DQ and DQS transitions with CLK

transitions edges of DQS

•ꢀ Commands entered on each positive CLK edge;

•ꢀ Data and data mask referenced to both edges of

KEY TIMING PARAMETERS

Parameter

-5

-6

-75 Unit

DQS

Clk Cycle Time

•ꢀ 4 bank operation controlled by BA0 , BA1

CAS Latency = 3

CAS Latency = 2.5

CAS Latency = 2

7.5

(Bank Address)

•ꢀ /CAS latency -2.0 / 2.5 / 3.0 (programmable) ;

Burst length -2 / 4 / 8 (programmable)

Burst type -Sequential / Interleave (program-

mable)

Clk Frequency

CAS Latency = 3

CAS Latency = 2.5

CAS Latency = 2

200

133

167

133

133 MHz

•ꢀ Auto precharge/ All bank precharge controlled

by A10

Access Time from Clock

CAS Latency = 3

•ꢀ 8192 refresh cycles / 64ms (4 banks concurrent

+0.70 +0.70 +0.75 ns

refresh)

CAS Latency = 2.5 +0.70 +0.70 +0.75 ns

CAS Latency = 2

•ꢀ Auto refresh and Self refresh

+0.75 +0.75 +0.75 ns

•ꢀ Row address A0-12 / Column address A0-9(x8)/

A0-8(x16)

•ꢀ SSTL_2 Interface

•ꢀ Package:

ADDRESS TABLE

Parameter

32M x 8

16M x 16

66-pin TSOP II (x8 and x16)

60-ball TF-BGA (x16 only)

Conﬁguration

8M x 8 x 4

banks

4M x 16 x 4

banks

Bank Address Pins

BA0, BA1

•ꢀ Temperature Range:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive (-40^oC to +85^oC)

Autoprecharge Pins

Row Addresses

Column Addresses

Refresh Count

A10/AP

A0 – A12

A0 – A9

A10/AP

A0 – A12

A0 – A8

8192 / 64ms 8192 / 64ms

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.

Rev. E

08/13/2010

12 3 4 5 6 7...41

中文翻译

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IS43R16160B-5TL 替代型号

型号	品牌	替代类型	描述	数据表
IC43R16160B-5TL	ISSI	功能相似	DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, PLASTIC, LEAD FREE, TSOP2-66
K4H561638H-UCCC	SAMSUNG	功能相似	DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66,

与IS43R16160B-5TL相关器件

型号	品牌	获取价格	描述	数据表
IS43R16160B-5TLI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5TLI-TR	ISSI	获取价格	暂无描述
IS43R16160B-5TL-TR	ISSI	获取价格	DRAM
IS43R16160B-6BI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-6BI-TR	ISSI	获取价格	DRAM
IS43R16160B-6BL	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-6BLI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-6BLI-TR	ISSI	获取价格	DRAM
IS43R16160B-6TL	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-6TLI	ISSI	获取价格	32Mx8, 16Mx16 256Mb DDR Synchronous DRAM

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