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IS42S16160D-75EBLI PDF预览

IS42S16160D-75EBLI

更新时间: 2024-02-13 10:38:25
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器
页数 文件大小 规格书
63页 984K
描述
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM

IS42S16160D-75EBLI 数据手册

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IS42S83200D, IS42S16160D  
IS45S83200D, IS45S16160D  
32Meg x 8, 16Meg x16  
JUNE 2009  
256-MBIT SYNCHRONOUS DRAM  
OVERVIEW  
FEATURES  
ISSI'sꢀ256MbꢀSynchronousꢀDRAMꢀꢀachievesꢀhigh-speedꢀ  
data transfer using pipeline architecture. All inputs and  
outputs signals refer to the rising edge of the clock input.  
Theꢀ256MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ  
•ꢀ Clockꢀfrequency:ꢀ166,ꢀ143ꢀꢀMHz  
•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ  
positive clock edge  
•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge  
•ꢀ SingleꢀPowerꢀsupply:ꢀ3.3Vꢀ+ꢀ0.3Vꢀ  
•ꢀ LVTTLꢀinterface  
IS42S83200Dꢀ  
IS42S16160Dꢀ  
8Mꢀxꢀ8ꢀxꢀ4ꢀBanksꢀ 4Mꢀx16x4ꢀBanksꢀ  
54-pinꢀTSOPIIꢀ  
54-pinꢀTSOPII  
•ꢀ Programmableꢀburstꢀlengthꢀ  
–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)  
54-ballꢀBGAꢀ(contactꢀMarketing)ꢀ  
•ꢀ Programmableꢀburstꢀsequence:ꢀ  
Sequential/Interleaveꢀ  
KEY TIMING PARAMETERS  
•ꢀ AutoꢀRefreshꢀ(CBR)  
•ꢀ SelfꢀRefresh  
Parameter  
-6  
-7  
-75E Unit  
ClkꢀCycleꢀTimeꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
6ꢀ  
10ꢀ  
•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ16ꢀmsꢀ(A2ꢀgrade)ꢀorꢀ  
64ꢀmsꢀ(commercial,ꢀindustrial,ꢀA1ꢀgrade)  
7ꢀ  
10ꢀ  
—ꢀ  
7.5ꢀ  
nsꢀ  
ns  
ClkꢀFrequencyꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
ꢀꢀ  
166ꢀ  
100ꢀ  
•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle  
143ꢀ  
100ꢀ  
—ꢀ  
133ꢀ  
Mhzꢀ  
Mhz  
•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)  
•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ  
AccessꢀTimeꢀꢀfromꢀClockꢀ  
CASꢀLatencyꢀ=ꢀ3ꢀ  
CASꢀLatencyꢀ=ꢀ2ꢀ  
5.4ꢀ  
6.5ꢀ  
5.4ꢀ  
6.5ꢀ  
—ꢀ  
5.5ꢀ  
nsꢀ  
ns  
operations capability  
•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ  
command  
OPTIONS  
•ꢀ Package:  
ADDRESS TABLE  
Parameter  
32M x 8  
16M x 16  
54-pinꢀTSOP-IIꢀ(x8ꢀandꢀx16)  
54-ballꢀBGAꢀ(x16ꢀonly)  
Configuration  
8M x 8 x 4  
banks  
4M x 16 x 4  
banks  
•ꢀ OperatingꢀTemperatureꢀRange:  
Commercial (0oC to +70oC)  
Refresh Count  
Com./Ind. 8K/64ms  
A1 8K/64ms  
8K/64ms  
8K/64ms  
8K/16ms  
Industrialꢀ(-40oCꢀtoꢀ+85oC)  
AutomotiveꢀGradeꢀA1ꢀ(-40oCꢀtoꢀ+85oC)  
AutomotiveꢀGradeꢀA2ꢀ(-40oC to +105oC)  
A2 8K/16ms  
Row Addresses  
A0-A12  
A0-A12  
A0-A8  
Column Addresses  
Bank Address Pins  
Auto Precharge Pins  
A0-A9  
•ꢀ DieꢀRevision:ꢀD  
BA0, BA1  
A10/AP  
BA0, BA1  
A10/AP  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. B  
06/11/09  

IS42S16160D-75EBLI 替代型号

型号 品牌 替代类型 描述 数据表
IS42S16160G-7BLI ISSI

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32Meg x 8, 16Meg x16 256Mb SYNCHRONOUS DRAM

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IS42S16160D-7BI ISSI

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IS42S16160D-7BI-TR ISSI

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暂无描述
IS42S16160D-7BL ISSI

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32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160D-7BLI ISSI

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32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM